Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers

被引：39

作者：

So, Byeongchan ^{[1
]}

Kim, Jinwan ^{[1
]}

Kwak, Taemyung ^{[1
]}

Kim, Taeyoung ^{[1
]}

Lee, Joohyoung ^{[1
]}

Choi, Uiho ^{[1
]}

Nam, Okhyun ^{[1
]}

机构：

[1] Korea Polytech Univ, Dept Nanoopt Engn, Convergence Ctr Adv Nano Semicond CANS, 237 Sangidaehak Ro, Siheung Si, Gyeonggi Do, South Korea

来源：

RSC ADVANCES | 2018年 / 8卷 / 62期

关键词：

HOLE INJECTION; LEDS;

D O I：

10.1039/c8ra06982d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A DUV-LED with a graded superlattice electron blocking layer (GSL-EBL) is demonstrated to show improved carrier injection into the multi-quantum well region. The structures of modified EBLs are designed via simulation. The simulation results show the carrier behavior mechanism of DUV-LEDs with a single EBL (S-EBL), graded EBL (G-EBL), and GSL-EBL. The variation in the energy band diagram around the EBL region indicates that the introduction of GSL-EBL is very effective in enhancing carrier injection. Besides, all DUV-LEDs emitting at 280 nm are grown in the high temperature metal organic chemical deposition system. It is confirmed that the optical power of the DUV-LED with the GSL-EBL is significantly higher than that of the DUV-LED with the S-EBL and G-EBL.

引用

收藏

页码：35528 / 35533

页数：6

相关论文

共 26 条

[1] Effects of double layer AlN buffer layers on properties of Si-doped AlxGa1-xN for improved performance of deep ultraviolet light emitting diodes [J].

Al Tahtamouni, T. M. ;

Lin, J. Y. ;

Jiang, H. X. .

JOURNAL OF APPLIED PHYSICS, 2013, 113 (12)

[2]

[Anonymous], SILENSE SPECLED STR

[3]

Chen J, 2017, ENVIRON SCI-WAT RES, V3, P188, DOI [10.1039/c6ew00241b, 10.1039/C6EW00241B]

[4] Modulating optical polarization properties of Al-rich AlGaN/AlN quantum well by controlling wavefunction overlap [J].

Chen, X. J. ;

Yu, T. J. ;

Lu, H. M. ;

Yuan, G. C. ;

Shen, B. ;

Zhang, G. Y. .

APPLIED PHYSICS LETTERS, 2013, 103 (18)

[5] Enhanced vertical and lateral hole transport in high aluminum-containing AlGaN for deep ultraviolet light emitters [J].

Cheng, B. ;

Choi, S. ;

Northrup, J. E. ;

Yang, Z. ;

Knollenberg, C. ;

Teepe, M. ;

Wunderer, T. ;

Chua, C. L. ;

Johnson, N. M. .

APPLIED PHYSICS LETTERS, 2013, 102 (23)

[6] Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures [J].

Heikman, S ;

Keller, S ;

Wu, Y ;

Speck, JS ;

DenBaars, SP ;

Mishra, UK .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (12) :10114-10118

[7] Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer [J].

Hirayama, Hideki ;

Tsukada, Yusuke ;

Maeda, Tetsutoshi ;

Kamata, Norihiko .

APPLIED PHYSICS EXPRESS, 2010, 3 (03)

[8] Enhancing Carrier Injection Using Graded Superlattice Electron Blocking Layer for UVB Light-Emitting Diodes [J].

Janjua, Bilal ;

Tien Khee Ng ;

Alyamani, Ahmed Y. ;

El-Desouki, Munir M. ;

Ooi, Boon S. .

IEEE PHOTONICS JOURNAL, 2014, 6 (06)

[9] Efficient carrier-injection and electron-confinement in UV-B light-emitting diodes [J].

Kolbe, T. ;

Stellmach, J. ;

Mehnke, F. ;

Rothe, M. -A. ;

Kueller, V. ;

Knauer, A. ;

Einfeldt, S. ;

Wernicke, T. ;

Weyers, M. ;

Kneissl, M. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2016, 213 (01) :210-214

[10] Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer [J].

Lin, Bing-Cheng ;

Chen, Kuo-Ju ;

Wang, Chao-Hsun ;

Chiu, Ching-Hsueh ;

Lan, Yu-Pin ;

Lin, Chien-Chung ;

Lee, Po-Tsung ;

Shih, Min-Hsiung ;

Kuo, Yen-Kuang ;

Kuo, Hao-Chung .

OPTICS EXPRESS, 2014, 22 (01) :463-469