Physical models for predicting plasma nitrided Si-O-N gate dielectric properties from physical metrology

被引:8
作者
Kraus, PA [1 ]
Ahmed, KZ [1 ]
Olsen, CS [1 ]
Nouri, F [1 ]
机构
[1] Appl Mat Inc, Front End Prod Grp, Santa Clara, CA 95054 USA
关键词
direct tunneling; EOT; gate dielectric; silicon oxynitride; X-ray photoelectron spectroscopy;
D O I
10.1109/LED.2003.816575
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using simple physical models, specific relationships between parameters measured by X-ray photoelectron spectroscopy (XPS) and those measured on MOS transistors are described for silicon oxynitride gate dielectrics prepared by plasma nitridation. Correlations are established between the equivalent oxide thickness (EOT) and gate leakage current and the nitrogen anneal dose and physical thickness as measured by XPS. These correlations, from devices in the 10 to 13 Angstrom EOT range, allow accurate estimates of electrical thickness and leakage without device fabrication, enabling both development and process monitoring for sub-130-nm node gate dielectrics.
引用
收藏
页码:559 / 561
页数:3
相关论文
共 16 条
[1]   Analytic model of parasitic capacitance attenuation in CMOS devices with hyper-thin oxides [J].
Ahmed, K ;
Ibok, E ;
Hauser, J .
ELECTRONICS LETTERS, 2000, 36 (20) :1699-1700
[2]  
[Anonymous], 2002, INT TECHNOLOGY ROADM
[3]   Inversion MOS capacitance extraction for high-leakage dielectrics using a transmission line equivalent circuit [J].
Barlage, DW ;
O'Keeffe, JT ;
Kavalieros, JT ;
Nguyen, MM ;
Chau, RS .
IEEE ELECTRON DEVICE LETTERS, 2000, 21 (09) :454-456
[4]   Direct extraction of the electron tunneling effective mass in ultrathin SiO2 [J].
Brar, B ;
Wilk, GD ;
Seabaugh, AC .
APPLIED PHYSICS LETTERS, 1996, 69 (18) :2728-2730
[5]   PROPERTIES OF SIXOYNZ FILMS ON SI [J].
BROWN, DM ;
GRAY, PV ;
HEUMANN, FK ;
PHILIPP, HR ;
TAFT, EA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :311-&
[6]   Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics:: Understanding the processing, structure, and physical and electrical limits [J].
Green, ML ;
Gusev, EP ;
Degraeve, R ;
Garfunkel, EL .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) :2057-2121
[7]   Tunneling leakage current in oxynitride: Dependence on oxygen/nitrogen content [J].
Guo, X ;
Ma, TP .
IEEE ELECTRON DEVICE LETTERS, 1998, 19 (06) :207-209
[8]  
Inaba S, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P651, DOI 10.1109/IEDM.2002.1175923
[9]  
Ishikawa D, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P869, DOI 10.1109/IEDM.2002.1175975
[10]   Modeling and optimization of oxynitride gate dielectrics formation by remote plasma nitridation of silicon dioxide [J].
Kapila, D ;
Hattangady, S ;
Douglas, M ;
Kraft, R ;
Gribelyuk, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (03) :1111-1116