The size effect in current-voltage characteristic of VO2-based ceramics in the on-state

被引：0

作者：

Ivon, A. I. ^{[1
]}

Chernenko, I. M. ^{[1
]}

Kolbunov, V. R. ^{[1
]}

Mozharovsky, L. A. ^{[1
]}

机构：

[1] Dnepropetrovsk Natl Univ, Dept Elect Telecommun & Comp Syst, UA-49050 Dnepropetrovsk, Ukraine

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2007年 / 18卷 / 10期

关键词：

D O I：

10.1007/s10854-006-9106-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Current-voltage characteristics of (wt.%) 45VO(2)-15VPG-5Cu-35SnO(2) ceramics in the on-state were investigated in the electric current interval between 0.3 A and 5 A. Transition from the region with negative differential resistance to the region with positive differential resistance is observed in current-voltage characteristic when electric current increases. The reason of such behaviour is the limitation of lateral expansion for the filament of VO2 metal phase by the sample's size. The change in the sign of differential resistance occurs, when the cross-section area of the filament reaches the sample's cross-section area. In this case the phase transition of VO2 into metal state is completed in the whole volume of the sample. Therefore at further increasing of current the current-voltage characteristic has the positive differential resistance.

引用

页码：1009 / 1012

页数：4

共 20 条

[1] ELECTRICAL PROPERTIES OF AN EPOXY RESIN DURING AND AFTER CURING [J].

ADAMEC, V .

JOURNAL OF POLYMER SCIENCE PART A-1-POLYMER CHEMISTRY, 1972, 10 (05) :1277-&

[2] Switching behavior in V2O5-SrO-FeO glass system [J].

Aziz, MS ;

Abdel-Wahab, F ;

Mostafa, AG ;

El-Agwany, EM .

MATERIALS CHEMISTRY AND PHYSICS, 2005, 91 (2-3) :532-537

[3] Switching properties of V1-xTixO2 thin films deposited from alkoxides [J].

Beteille, F ;

Morineau, R ;

Livage, J ;

Nagano, M .

MATERIALS RESEARCH BULLETIN, 1997, 32 (08) :1109-1117

[4]

BUGAYEV AA, 1979, FAZOVIY PEREKHOD MET

[5] DIRECT INFRARED MEASUREMENTS OF FILAMENT TRANSIENT TEMPERATURE DURING SWITCHING IN VANADIUM OXIDE FILM DEVICES [J].

DUCHENE, J .

JOURNAL OF SOLID STATE CHEMISTRY, 1975, 12 (3-4) :303-306

[6] THE EFFECTS OF FILAMENTARY CONDUCTION THROUGH UNIFORM AND FLAWED FILAMENTS IN INSULATORS AND SEMICONDUCTORS [J].

GOULD, RD .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 55 (03) :363-386

[7] ANOMALOUS HYSTERESIS SHAPE OF THIN VO2 LAYERS [J].

HAIDINGER, W ;

GROSS, D .

THIN SOLID FILMS, 1972, 12 (02) :433-+

[8]

HAYWANG W, 1984, AMORPHE POLYKRISTALL, P75

[9] Conductivity stabilization by metal and oxide additives in ceramics on the basis of VO2 and glass V2O5-P2O5 [J].

Ivon, AI ;

Kolbunov, VR ;

Chernenko, IM .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2005, 351 (46-48) :3649-3654

[10] The influence of temperature hysteresis at metal-semiconductor phase transition on current-voltage characteristic of VO2-based ceramics [J].

Ivon, AI ;

Kolbunov, VR ;

Chernenko, IM .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2005, 16 (09) :611-615

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