32 dB Gain 28 nm Bulk CMOS W-Band LNA

被引：33

作者：

Pepe, Domenico ^{[1
,2
,3
]}

Zito, Domenico ^{[1
]}

机构：

[1] Tyndall Natl Inst, Cork, Ireland

[2] MCCI, Cork, Ireland

[3] Natl Univ Ireland Univ Coll Cork, Dept Elect & Elect Engn, Cork, Ireland

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2015年 / 25卷 / 01期

基金：

爱尔兰科学基金会;

关键词：

CMOS; LNA; mm-wave; 28; nm; radiometer; W-band;

D O I：

10.1109/LMWC.2014.2370251

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high gain W-band low noise amplifier for radiometric applications in 28 nm bulk CMOS technology is presented. Pads, inductors, capacitors and coplanar waveguides have been custom designed. The parasitic effects of the transistor layout have been evaluated by means of electromagnetic simulations and calculations based on data reported in the design rule manual of the technology. The amplifier consists of six cascode stages with input, output and interstage conjugate matching for maximum power transfer. Measurement results show a peak gain of 32 dB and a noise figure of 5.3 dB at 91 GHz.

引用

页码：55 / 57

页数：3