Thermally Stable, High Performance Transfer Doping of Diamond using Transition Metal Oxides

被引:57
作者
Crawford, Kevin G. [1 ]
Qi, Dongchen [2 ]
McGlynn, Jessica [3 ]
Ivanov, Tony G. [4 ]
Shah, Pankaj B. [4 ]
Weil, James [4 ]
Tallaire, Alexandre [5 ]
Ganin, Alexey Y. [3 ]
Moran, David A. J. [1 ]
机构
[1] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland
[2] La Trobe Univ, La Trobe Inst Mol Sci, Dept Chem & Phys, Melbourne, Vic 3086, Australia
[3] Univ Glasgow, Sch Chem, Glasgow G12 8LT, Lanark, Scotland
[4] US Army, Sensors & Electron Devices Directorate, Res Lab, Adelphi, MD 20783 USA
[5] Univ Paris 13, CNRS, LSPM, F-93430 Villetaneuse, France
基金
英国工程与自然科学研究理事会; 澳大利亚研究理事会;
关键词
POLYCRYSTALLINE DIAMOND; SURFACE CONDUCTIVITY; TRANSISTORS; HYDROGEN; ORIGIN;
D O I
10.1038/s41598-018-21579-4
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
We report on optimisation of the environmental stability and high temperature operation of surface transfer doping in hydrogen-terminated diamond using MoO3 and V2O5 surface acceptor layers. In-situ annealing of the hydrogenated diamond surface at 400 degrees C was found to be crucial to enhance long-term doping stability. High temperature sheet resistance measurements up to 300 degrees C were performed to examine doping thermal stability. Exposure of MoO3 and V2O5 transfer-doped hydrogen-terminated diamond samples up to a temperature of 300 degrees C in ambient air showed significant and irreversible loss in surface conductivity. Thermal stability was found to improve dramatically however when similar thermal treatment was performed in vacuum or in ambient air when the oxide layers were encapsulated with a protective layer of hydrogen silsesquioxane (HSQ). Inspection of the films by X-ray diffraction revealed greater crystallisation of the MoO3 layers following thermal treatment in ambient air compared to the V2O5 films which appeared to remain amorphous. These results suggest that proper encapsulation and passivation of these oxide materials as surface acceptor layers on hydrogenterminated diamond is essential to maximise their environmental and thermal stability.
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页数:9
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