Carbon contamination of EUV mask: film characterization, impact on lithographic performance, and cleaning

被引：15

作者：

Nishiyama, Yasushi ^{[1
]}

Anazawa, Toshihisa ^{[1
]}

Oizumi, Hiroaki ^{[1
]}

Nishiyama, Iwao ^{[1
]}

Suga, Osamu ^{[1
]}

Abe, Kazuki ^{[2
]}

Kagata, Satoru ^{[2
]}

Izumi, Akira ^{[2
]}

机构：

[1] MIRAI Semicond Leading Edge Technol, 16-1 Onogawa, Tsukuba, Ibaraki 3058569, Japan

[2] Kyushu Inst Technol, Tobata Ku, Kitakyushu, Fukuoka 8048550, Japan

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES XII, PTS 1 AND 2 | 2008年 / 6921卷

关键词：

EUV; mask; contamination; cleaning;

D O I：

10.1117/12.771978

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The deposition characteristics of carbon film on EUV mask surface, the impact of carbon deposition on lithography performance, and cleaning of deposited carbon film on EUV mask are studied. The density of the carbon film was found to be nearly half of that of graphite by X-ray reflectivity measurement. The impact of carbon deposition on the lithography performance was simulated by SOLID-EUV. The CD variation by carbon deposition on the mask depends on the deposition profile on the absorber pattern. Intentionally created contaminated masks were treated by a cleaning process using atomic hydrogen. The cleaning efficiency and durability of film materials are discussed.

引用

页数：10

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