ELO bonding of GaAs devices on diamond film SAW devices

被引：0

作者：

Koh, K ^{[1
]}

Takabatake, N ^{[1
]}

Noge, S ^{[1
]}

Kobayashi, T ^{[1
]}

Arai, T ^{[1
]}

Hohkawa, K ^{[1
]}

机构：

[1] Kanagawa Inst Technol, Kanagawa, Japan

来源：

1998 IEEE ULTRASONICS SYMPOSIUM - PROCEEDINGS, VOLS 1 AND 2 | 1998年

关键词：

D O I：

暂无

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

This paper reports a basic study on the integration of diamond film with GaAs devices. We investigated roughness of diamond film surface by AFM and estimated thermal conductivity of diamond film by acoustic-optical measurement technology. We also bonded GaAs devices such as Schottky junction, MSM diode on the diamond film using improved epitaxial liftoff technology, in which polyimide film is used in place of black wax. These results confirm possibility of fabricating SAW-semiconductor functional devices on the diamond film.

引用

页码：327 / 330

页数：4

共 7 条

[1] UNUSUALLY HIGH THERMAL-CONDUCTIVITY IN DIAMOND FILMS
GRAEBNER, JE
JIN, S
KAMMLOTT, GW
HERB, JA
GARDINIER, CF
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (13) : 1576 - 1578
[2] HIGAKI K, 1997 IEEE MTTS, P829
[3] HOHKAWA K, 1995 IEEE ULTR S P, P401
[4] NAKAHATA H, 1992 IEEE ULTR S P, P377
[5] NAKAHATA H, 1996 IEEE ULTR S P, P285
[6] THERMAL-WAVE DEPTH PROFILING - THEORY
OPSAL, J
ROSENCWAIG, A
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4240 - 4246
[7] SUZUKI H, 1995, JPN J APPL PHYS, V36, P3109

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