20.7% highest efficiency large area (100.5cm2) HIT™ cell

被引：59

作者：

Sakata, H ^{[1
]}

Nakai, T ^{[1
]}

Baba, T ^{[1
]}

Taguchi, M ^{[1
]}

Tsuge, S ^{[1
]}

Uchihashi, K ^{[1
]}

Kiyama, S ^{[1
]}

机构：

[1] Sanyo Elect Co Ltd, New Mat Res Ctr, Moriguchi, Osaka 5708502, Japan

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915742

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A world record total area conversion efficiency of 20.7% and high open circuit voltage (Voc) of 719 mV were achieved on a solar cell with HIT (Heterojunction with Intrinsic Thin-layer) structures on both sides (wafer size: 100.5 cm(2), n-type solar-grade CZ-Si). This solar cell was fabricated with the same process as that used in our mass-production lines. The essence of this high performance is derived from the excellent passivation ability of the HIT structure on c-Si. This report discusses recent research forward excess of 20% efficiency HIT cell (similar to 100 cm(2)), focusing on the a-Si passivation effect estimated from the carrier lifetime, and describes product development for the industrialization of HIT cells.

引用

页码：7 / 12

页数：6

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[No title captured]

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