Luminescence and reflectivity characterization of AlGaN/GaN high electron mobility transistors

被引：1

作者：

Baron, N. ^{[1
]}

Leroux, M. ^{[1
]}

Zeggaoui, N. ^{[1
]}

Corfdir, P. ^{[1
]}

Semond, F. ^{[1
]}

Bougrioua, Z. ^{[1
]}

Azize, M. ^{[1
]}

Cordier, Y. ^{[1
]}

Massies, J. ^{[1
]}

机构：

[1] CNRS, Ctr Rech Hetero Epitaxie & Ses Applicat, F-06560 Valbonne, France

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 | 2009年 / 6卷

关键词：

OUTPUT POWER-DENSITY; OPTICAL CHARACTERIZATION; GAN; SILICON; SI(111); HEMTS; HETEROSTRUCTURES; SUBSTRATE; SAPPHIRE; GANHEMTS;

D O I：

10.1002/pssc.200880828

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on the optical characterization by photoluminescence and reflectivity of AlxGa1-xN/GaN high electron mobility transistor structures. The samples studied were grown either by molecular beam epitaxy or metal-organic vapor phase epitaxy, on silicon (111) or sapphire (0001) substrates. We focus on a broad luminescence band, shown to be related to the GaN cap layer (surface quantum-well) and its injection intensity dependence. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：S715 / S718

页数：4

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