Doping efficiency, dopant location, and oxidation of Si nanocrystals

被引：178

作者：

Pi, X. D. ^{[1
]}

Gresback, R. ^{[1
]}

Liptak, R. W. ^{[2
]}

Campbell, S. A. ^{[2
]}

Kortshagen, U. ^{[1
]}

机构：

[1] Univ Minnesota, Dept Mech Engn, Minneapolis, MN 55455 USA

[2] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2897291

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gas-phase plasma-synthesized silicon nanocrystals (Si-NCs) are doped with boron (B) or phosphorous (P) during synthesis. The doping efficiency of B is smaller than that of P, consistent with the theoretical prediction of impurity formation energies. Despite vastly different synthesis conditions, the effect of doping on the photoluminescence (PL) of gas-phase-synthesized Si-NCs is qualitatively similar to that of Si-NCs doped during solid phase nucleation. Studies of oxidation-induced changes in PL and etching-induced changes in dopant concentration show that P resides at or near the Si-NC surface, while B is in the Si-NC cores. The oxidation of Si-NCs follows the Cabrera - Mott mechanism [N. Cabrera and N. F. Mott, Rep. Prog. Phys. 12, 163 (1948)]. (C) 2008 American Institute of Physics.

引用

页数：3

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