Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure

被引：45

作者：

Chand, Umesh ^{[1
,2
]}

Huang, Kuan-Chang ^{[3
]}

Huang, Chun-Yang ^{[3
]}

Ho, Chia-Hua ^{[4
]}

Lin, Chen-Hsi ^{[4
]}

Tseng, Tseung-Yuen ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30010, Taiwan

[3] United Microelect Corp, Tainan 300, Taiwan

[4] Winbond Elect Corp, Hsinchu 300, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 18期

关键词：

FILM; PERFORMANCE;

D O I：

10.1063/1.4921182

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of the annealing treatment of a HfO2 resistive switching layer and the memory performance of a HfO2-based resistive random access memory (cross-bar structure) device were investigated. Oxygen is released from HfO2 resistive switching layers during vacuum annealing, leading to unstable resistive switching properties. This oxygen release problem can be suppressed by inserting an Al2O3 thin film, which has a lower Gibbs free energy, between the HfO2 layer and top electrode to form a Ti/Al2O3/HfO2/TiN structure. This device structure exhibited good reliability after high temperature vacuum annealing and post metal annealing (PMA) treatments. Moreover, the endurance and retention properties of the device were also improved after the PMA treatment. (c) 2015 AIP Publishing LLC.

引用

页数：6

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