New laser technology for wire bonding in power devices

被引：3
作者：
Kostrubiec, F
Lisik, Z
Pawlak, R
Jakubowska, K
Korbicki, A
机构：
[1] Lodz Tech Univ, Div Sci Mat, PL-90924 Lodz, Poland
[2] Lodz Tech Univ, Inst Elect, PL-90924 Lodz, Poland
[3] Inst Electron Technol, PL-02668 Warsaw, Poland
来源：
MICROELECTRONICS JOURNAL | 2001年 / 32卷 / 5-6期
关键词：
wire bonding; laser technologies; power devices; IPM;
D O I：
10.1016/S0026-2692(01)00027-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Attempts to increase the reliability of the assembly of power transistors have induced the authors to propose a new method for thick wire bonding. Bonding produced in this technology has the form of a weld made by a pulsed laser beam. The results of some investigations into the proposed method are presented. The results of studies on the semiconductor test structures bring hopes of increasing the reliability of the assembly of such structures. (C) 2001 Published by Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：543 / 546
页数：4
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