New laser technology for wire bonding in power devices

被引：3
作者：
Kostrubiec, F
Lisik, Z
Pawlak, R
Jakubowska, K
Korbicki, A
机构：
[1] Lodz Tech Univ, Div Sci Mat, PL-90924 Lodz, Poland
[2] Lodz Tech Univ, Inst Elect, PL-90924 Lodz, Poland
[3] Inst Electron Technol, PL-02668 Warsaw, Poland
来源：
MICROELECTRONICS JOURNAL | 2001年 / 32卷 / 5-6期
关键词：
wire bonding; laser technologies; power devices; IPM;
D O I：
10.1016/S0026-2692(01)00027-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Attempts to increase the reliability of the assembly of power transistors have induced the authors to propose a new method for thick wire bonding. Bonding produced in this technology has the form of a weld made by a pulsed laser beam. The results of some investigations into the proposed method are presented. The results of studies on the semiconductor test structures bring hopes of increasing the reliability of the assembly of such structures. (C) 2001 Published by Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：543 / 546
页数：4
相关论文
共 50 条
  • [31] Microelectronic Wire Bonding with Insulated Au Wire: Effects of Process Parameters on Insulation Removal and Crescent Bonding
    Lee, Jaesik
    Mayer, Michael
    Zhou, Norman
    Persic, John
    MATERIALS TRANSACTIONS, 2008, 49 (10) : 2347 - 2353
  • [32] Recent advances on dielectrics technology for SiC and GaN power devices
    Roccaforte, F.
    Fiorenza, P.
    Greco, G.
    Vivona, M.
    Lo Nigro, R.
    Giannazzo, F.
    Patti, A.
    Saggio, M.
    APPLIED SURFACE SCIENCE, 2014, 301 : 9 - 18
  • [33] Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices
    Horikiri, Fumimasa
    Fukuhara, Noboru
    Ohta, Hiroshi
    Asai, Naomi
    Narita, Yoshinobu
    Yoshida, Takehiro
    Mishima, Tomoyoshi
    Toguchi, Masachika
    Miwa, Kazuki
    Sato, Taketomo
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2019, 32 (04) : 489 - 495
  • [34] Reliability aspects of copper metallization and interconnect technology for power devices
    Hille, Frank
    Roth, Roman
    Schaeffer, Carsten
    Schulze, Holger
    Heuck, Nicolas
    Bolowski, Daniel
    Guth, Karsten
    Ciliox, Alexander
    Rott, Karma
    Umbach, Frank
    Kerber, Martin
    MICROELECTRONICS RELIABILITY, 2016, 64 : 393 - 402
  • [35] Analysis of Lead-Free Piezoceramic-Based Power Ultrasonic Transducers for Wire Bonding
    Mathieson, Andrew
    DeAngelis, Dominick A.
    IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2016, 63 (01) : 156 - 164
  • [36] Deformation analysis of Au wire bonding
    Saiki, Hiroyuki
    Marumo, Yasuo
    Nishitake, Hiroshi
    Uemura, Tetsuhiro
    Yotsumoto, Takahiro
    JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2006, 177 (1-3) : 709 - 712
  • [37] Contacting of Multilayer Piezoactuators by Wire Bonding
    Lenk, A.
    Schoenecker, A.
    Schuh, C.
    Oppermann, M.
    ACTUATOR 08, CONFERENCE PROCEEDINGS, 2008, : 63 - +
  • [38] EFFECT OF ULTRASONIC VIBRATION ON WIRE BONDING
    HAJI, H
    MORITA, T
    NAKASHIMA, H
    YOSHINAGA, H
    JOURNAL OF THE JAPAN INSTITUTE OF METALS, 1993, 57 (08) : 884 - 889
  • [39] Deformation characteristics of Au wire bonding
    Saiki, Hiroyuki
    Nishitake, Hiroshi
    Yotsumoto, Takahiro
    Marumo, Yasuo
    JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2007, 191 (1-3) : 16 - 19
  • [40] The degradation investigation of Al wire bonding strength in power device under thermal shock test
    Fei, Jingming
    Ren, Ping
    Wang, Ningning
    Zhang, Binbin
    2017 18TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2017, : 1179 - 1183
12345