Structural, dielectric, magnetic, magnetodielectric and impedance spectroscopic studies of multiferroic BiFeO3-BaTiO3 ceramics
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作者:
Singh, Hemant
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Indian Inst Technol, Smart Mat Res Lab, Dept Phys, Roorkee 247667, Uttar Pradesh, IndiaIndian Inst Technol, Smart Mat Res Lab, Dept Phys, Roorkee 247667, Uttar Pradesh, India
Singh, Hemant
[1
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Kumar, Amit
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Indian Inst Technol, Smart Mat Res Lab, Dept Phys, Roorkee 247667, Uttar Pradesh, IndiaIndian Inst Technol, Smart Mat Res Lab, Dept Phys, Roorkee 247667, Uttar Pradesh, India
Kumar, Amit
[1
]
Yadav, K. L.
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Indian Inst Technol, Smart Mat Res Lab, Dept Phys, Roorkee 247667, Uttar Pradesh, IndiaIndian Inst Technol, Smart Mat Res Lab, Dept Phys, Roorkee 247667, Uttar Pradesh, India
Yadav, K. L.
[1
]
机构:
[1] Indian Inst Technol, Smart Mat Res Lab, Dept Phys, Roorkee 247667, Uttar Pradesh, India
Polycrystalline (1-x)BiFeO3-xBaTiO(3) (x = 0.00, 0.10, 0.20 and 0.30) ceramics have been prepared via mixed oxide route. The effect of BaTiO3 substitution on the dielectric, ferroelectric and magnetic properties of the BiFeO3 multiferroic perovskite was studied. From XRD analysis it revealed that BaTiO3 substitution does not affect the crystal structure of the (1-x)BiFeO3-xBaTiO(3) system up to x = 0.30. Improved dielectric properties were observed in the prepared system. An anomaly in the dielectric constant (epsilon) was observed in the vicinity of the antiferromagnetic transition temperature. Experimental results suggest that in the (1-x)BiFeO3-xBaTiO(3) system, the increase of BaTiO3 concentration leads to the effective suppression of the spiral spin structure of BiFeO3, resulting in the appearance of net magnetization. The dependence of dielectric constant and loss tangent on the magnetic field is a evidence of magnetoelectric coupling in (1-x)BiFeO3-xBaTiO(3) system. The impedance analysis suggests the presence of a temperature dependent electrical relaxation process in the material, which is almost similar for all the concentrations in the present studies. The electrical conductivity has been observed to increase with rise in temperature showing a typical negative temperature coefficient of the resistance (NTCR) behaviors analogous to a semiconductor and suggests a non-Debye type of electrical relaxation. (c) 2011 Elsevier B.V. All rights reserved.
机构:
Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R China
Univ Chinese Acad Sci, Beijing 100039, Peoples R China
Univ Maine, Fac Sci, CNRS UMR 6283, IMMM, Ave O Messiaen, F-72085 Le Mans, FranceChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R China
Peng, Jiangguli
Zeng, Jiangtao
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R China
Zeng, Jiangtao
Zheng, Liaoying
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R China
Zheng, Liaoying
Li, Guorong
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Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R China
Li, Guorong
Yaacoub, Nader
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Univ Maine, Fac Sci, CNRS UMR 6283, IMMM, Ave O Messiaen, F-72085 Le Mans, FranceChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R China
Yaacoub, Nader
Tabellout, Mohamed
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Univ Maine, Fac Sci, CNRS UMR 6283, IMMM, Ave O Messiaen, F-72085 Le Mans, FranceChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R China
Tabellout, Mohamed
Gibaud, Alain
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Univ Maine, Fac Sci, CNRS UMR 6283, IMMM, Ave O Messiaen, F-72085 Le Mans, FranceChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R China
Gibaud, Alain
Kassiba, Abdelhadi
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Univ Maine, Fac Sci, CNRS UMR 6283, IMMM, Ave O Messiaen, F-72085 Le Mans, FranceChinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Device, Shanghai 200050, Peoples R China
机构:
Hoseo Univ, Dept Semicond & Display Engn, Asan 336795, South KoreaHoseo Univ, Dept Semicond & Display Engn, Asan 336795, South Korea
Lee, Y. J.
Kim, J. S.
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Hoseo Univ, Dept Semicond & Display Engn, Asan 336795, South KoreaHoseo Univ, Dept Semicond & Display Engn, Asan 336795, South Korea
Kim, J. S.
Han, S. H.
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Korea Elect Technol Inst, Elect Mat & Device Res Ctr, Songnam 463816, South KoreaHoseo Univ, Dept Semicond & Display Engn, Asan 336795, South Korea
Han, S. H.
Kang, H. -W.
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Korea Elect Technol Inst, Elect Mat & Device Res Ctr, Songnam 463816, South KoreaHoseo Univ, Dept Semicond & Display Engn, Asan 336795, South Korea
Kang, H. -W.
Lee, H. -G.
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Korea Elect Technol Inst, Elect Mat & Device Res Ctr, Songnam 463816, South KoreaHoseo Univ, Dept Semicond & Display Engn, Asan 336795, South Korea
Lee, H. -G.
Cheon, Chae Il
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Hoseo Univ, Dept Semicond & Display Engn, Asan 336795, South Korea
Hoseo Univ, Dept Mat Sci & Engn, Asan 336795, South KoreaHoseo Univ, Dept Semicond & Display Engn, Asan 336795, South Korea
机构:
Univ Sfax, Fac Sci Sfax, Lab Multifunct Mat & Applicat LaMMA, LR16ES18, BP 1171, Sfax 3000, TunisiaUniv Sfax, Fac Sci Sfax, Lab Multifunct Mat & Applicat LaMMA, LR16ES18, BP 1171, Sfax 3000, Tunisia
Krir, Houda
Gadhoumi, F.
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Univ Sfax, Fac Sci Sfax, Lab Multifunct Mat & Applicat LaMMA, LR16ES18, BP 1171, Sfax 3000, TunisiaUniv Sfax, Fac Sci Sfax, Lab Multifunct Mat & Applicat LaMMA, LR16ES18, BP 1171, Sfax 3000, Tunisia
Gadhoumi, F.
Abdelmoula, N.
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Univ Sfax, Fac Sci Sfax, Lab Multifunct Mat & Applicat LaMMA, LR16ES18, BP 1171, Sfax 3000, TunisiaUniv Sfax, Fac Sci Sfax, Lab Multifunct Mat & Applicat LaMMA, LR16ES18, BP 1171, Sfax 3000, Tunisia
Abdelmoula, N.
Mezzane, D.
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Cadi Ayyad Univ, Fac Sci & Technol, Lab Innovat Mat Energy & Sustainable Dev IMED, BP 549, Marrakech, MoroccoUniv Sfax, Fac Sci Sfax, Lab Multifunct Mat & Applicat LaMMA, LR16ES18, BP 1171, Sfax 3000, Tunisia