Deoxyribonucleic Acid Sensitive Graphene Field-Effect Transistors

被引：0

作者：

Hwang, Jongseung ^{[1
,2
]}

Kim, Heetae ^{[1
,2
]}

Lee, Jaehyun ^{[1
,3
,4
]}

Whang, Dongmok ^{[1
,3
,4
]}

Hwang, Sungwoo ^{[1
,2
]}

机构：

[1] Korea Univ, Res Ctr Time Domain Nanofunct Devices, Seoul 136701, South Korea

[2] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

[3] Sungkyunkwan Univ, SKK Adv Inst Nanotechnol, Suwon 440746, South Korea

[4] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2011年 / E94C卷 / 05期

关键词：

graphene; chemical vapour deposition; transport; field-effect transistor; DNA; EPITAXIAL GRAPHENE; DNA;

D O I：

10.1587/transele.E94.C.826

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the effect of deoxyribonucleic acid (DNA) adsorption on a graphene field-effect-transistor (FET) device. We have used graphene which is grown on a Ni substrate by chemical vapour deposition. The Raman spectra of our graphene indicate its high quality, and also show that it consists of only a few layers. The current-voltage characteristics of our bare graphene strip FET show a hole conduction behavior, and the gate sensitivity of 0.0034 mu A/V, which is reasonable with the size of the strip (5 x 10 mu m(2)). After the adsorption of 30 base pairs single-stranded poly (dT) DNA molecules, the conductance and gate operation of the graphene FET exhibit almost 11% and 18% decrease from those of the bare graphene FET device. The observed change may suggest a large sensitivity for a small enough (nm size) graphene strip with larger semiconducting property.

引用

页码：826 / 829

页数：4

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