Laser-induced damage threshold of sapphire in nanosecond, picosecand and femtosecond regimes

被引：78

作者：

Uteza, O. ^{[1
]}

Bussiere, B. ^{[1
,2
]}

Canova, F. ^{[3
]}

Chambaret, J. -P. ^{[3
]}

Delaporte, P. ^{[1
]}

Itina, T. ^{[1
]}

Sentis, M. ^{[1
]}

机构：

[1] Univ Aix Marseille 2, LP3 CNRS, F-13288 Marseille 9, France

[2] Amplitude Technol, F-91029 Evry, France

[3] Ecole Polytech, ENSTA, LOA, F-91761 Palaiseau, France

来源：

APPLIED SURFACE SCIENCE | 2007年 / 254卷 / 04期

关键词：

laser-induced damage; sapphire; femtosecond; picosecond; nanosecond;

D O I：

10.1016/j.apsusc.2007.09.046

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface laser-induced damage threshold fluence of sapphire is determined under various experimental conditions concerning the material irradiation (femtosecond, picosecond and nanosecond temporal regimes) and preparation (surface state). The results are of interest for optimising laser micromachining processes and for robust operation of high-peak power femtosecond Ti:sapphire laser chains. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：799 / 803

页数：5

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