Investigation of Switching Behavior of an IGBT under Soft Turn-off in Application for Dual-Active Bridge Converters

被引：0

作者：

Ogawa, Eri ^{[1
]}

Onozawa, Yuichi ^{[1
]}

De Doncker, Rik W. ^{[2
]}

机构：

[1] Fuji Elect Co Ltd, Elect Devices Business Grp, Matsumoto, Nagano, Japan

[2] Rhein Westfal TH Aachen, Flexible Elect Networks Res CAMPUS Inst PGS, EON ERC, Aachen, Germany

来源：

2018 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-NIIGATA 2018 -ECCE ASIA) | 2018年

关键词：

DC-DC Converter; Dual-Active Bridge; Soft-switching; Insulated gate bipolar transistor;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

To investigate the behavior of insulated gate bipolar transistors (IGBTs) applied in dual-active bridge (DAB) converters, for first approach, the switching behavior of a 3300 V IGBTs with a snubber capacitor in parallel is analyzed using the software TCAD. Simulations confirmed that a long-tail current appears due to low dV/dt of the collector-emitter voltage. This causes increased turn-off losses even under zero voltage soft-switching (ZVS) conditions. To resolve this issue, reduced tail current structures are proposed and analyzed.

引用

页码：2768 / 2773

页数：6

共 6 条

[1]

[Anonymous], 2011, P 14 EUR C POW EL AP

[2]

[Anonymous], 2012, THESIS

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[4]

Jimichi T, 2017, 2017 IEEE 3RD INTERNATIONAL FUTURE ENERGY ELECTRONICS CONFERENCE AND ECCE ASIA (IFEEC 2017-ECCE ASIA), P591, DOI 10.1109/IFEEC.2017.7992105

[5]

Naayagi RT, 2015, INT C POWER ELECT DR, P499, DOI 10.1109/PEDS.2015.7203479

[6]

Stieneker M., 2015, 2015 IEEE 13th Brazilian Power Electronics Conference and 1st Southern Power Electronics Conference (COBEP/SPEC), P1

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