共 40 条
Interfacial charge transfer and charge generation in organic electronic devices
被引:78
作者:

Matsushima, Toshinori
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Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan

Jin, Guang-He
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Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan

Kanai, Yoshihiro
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Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan

Yokota, Tomoyuki
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Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan

Kitada, Seiki
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Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan

Kishi, Toshiyuki
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Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan

Murata, Hideyuki
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Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan
机构:
[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan
关键词:
Organic light-emitting diodes;
Hole-only devices;
Interfacial charge transfer and generation;
Organic hole-transport materials and layers;
Molybdenum trioxide;
LIGHT-EMITTING-DIODES;
TRANSITION-METAL OXIDES;
MOLYBDENUM TRIOXIDE;
HOLE INJECTION;
BUFFER LAYER;
MOBILITY;
SPECTROSCOPY;
FILMS;
D O I:
10.1016/j.orgel.2011.01.001
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
We have recently proposed that improvement of device performance using a buffer layer of molybdenum trioxide (MoO3) originates from interfacial charge generation at an interface of MoO3 and an organic hole-transport layer [17]. However, there is no clear experimental evidence enough to support the charge generation in our recent report. In this study, from comparison of current density-voltage characteristics of organic hole-only devices and ultraviolet/visible/near-infrared absorption spectra of composite films, we can conclude that the interfacial charge generation surly occurs to realize space-charge-limited currents of a wide variety of organic hole-transport layers. Moreover, a drastic increase in current density of a bilayer device of n-type C60 and p-type N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (alpha-NPD) by using a MoO3 layer can provide the evidence of the charge generation. (C) 2011 Elsevier B.V. All rights reserved.
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页码:520 / 528
页数:9
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