Asymmetric ground states in La0.67Sr0.33MnO3/BaTiO3 heterostructures induced by flexoelectric bending

被引:2
|
作者
Qi, Mingqun [1 ,2 ,7 ,8 ]
Yang, Zhen [2 ,3 ,8 ]
Chen, Shengru [2 ,3 ,8 ]
Lin, Shan [2 ,3 ,8 ]
Jin, Qiao [2 ,3 ,8 ]
Hong, Haitao [2 ,3 ,8 ]
Rong, Dongke [2 ,8 ]
Guo, Haizhong [2 ,4 ]
Wang, Can [2 ,3 ,5 ,8 ]
Wang, Ziyu [6 ]
Jin, Kui-Juan [2 ,3 ,5 ,8 ]
Wu, Zhenping [1 ,2 ,7 ]
Guo, Er-Jia [2 ,3 ,5 ,8 ]
机构
[1] Beijing Univ Posts & Telecommun, Sch Sci, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[4] Zhengzhou Univ, Sch Phys & Microelect, Key Lab Mat Phys, Minist Educ, Zhengzhou 450001, Peoples R China
[5] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
[6] Wuhan Univ, Inst Technol Sci, Wuhan 430072, Peoples R China
[7] Beijing Univ Posts & Telecommun, Sch Sci, Lab Optoelect Mat & Devices, Beijing 100876, Peoples R China
[8] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
基金
中国国家自然科学基金; 北京市自然科学基金;
关键词
FLEXIBLE ELECTRONICS; THIN-FILMS; TEMPERATURE; INTEGRATION; DISTORTION;
D O I
10.1063/5.0092134
中图分类号
O59 [应用物理学];
学科分类号
摘要
Misfit strain delivered from single-crystal substrates typically modifies the ground states of transition metal oxides, generating increasing interest in designing modern transducers and sensors. Here, we demonstrate that magnetotransport properties of La0.67Sr0.33MnO3 (LSMO) films were continuously tuned by uniaxial strain produced by a home-designed bending jig. The electrical conductivity and Curie temperature of LSMO films are enhanced by bending stresses. The resistivity of u-shape bended LSMO decays three times faster than that of n-shape bended LSMO as a response to the same magnitude of strain. The asymmetric magnetic states in uniaxially strained LSMO are attributed to the dual actions of Jahn-Teller distortion and strain gradient mediated flexoelectric fields in an adjacent ferroelectric layer. These findings of multi-field regulation in a single material provide a feasible means for developing flexible electronic and spintronic devices. Published under an exclusive license by AIP Publishing.
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收藏
页数:6
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