4H-SiC planar MESFETs on high-purity semi-insulating substrates

被引：4

作者：

Yim, Jeong Hyuk ^{[1
]}

Song, Ho Keun ^{[1
]}

Moon, Jeong Hyun ^{[1
]}

Seo, Han Seok ^{[1
]}

Lee, Jong Ho ^{[1
,2
]}

Na, Hoon Joo ^{[1
]}

Lee, Jae Bin

Kim, Hyeong Joon ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

[2] Sangshin Elecom, R&D Ctr, Yeongigun 339814, South Korea

来源：

SILICON CARBIDE AND RELATED MATERIALS 2006 | 2007年 / 556-557卷

关键词：

MESFET; high-purity semi-insulating (HPSI) substrate; current instability;

D O I：

10.4028/www.scientific.net/MSF.556-557.763

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Planar MESFETs were fabricated on high-purity semi-insulating (HPSI) 4H-SiC substrates. The saturation drain current of the fabricated MESFETs with a gate length of 0.5 mu m and a gate width of 100 mu m was 430 mA/mm, and the transconductance was 25 mS/mm. The maximum oscillation frequency and cut-off frequency were 26.4 GHz and 7.2 GHz, respectively. The power gain was 8.4 dB and the maximum output power density was 2.8 W/mm for operation of class A at CW 2 GHz. MESFETs on HPSI substrates showed no current instability and much higher output power density in comparison to MESFETs on vanadium-doped SI substrates.

引用

页码：763 / +

页数：2

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