Dynamics of ground and excited states of bound excitons in gallium nitride

被引:4
作者
Korona, KP
Wysmolek, A
Stepniewski, R
Kuhl, J
Look, DC
Lee, SK
Han, JY
机构
[1] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland
[2] MPI Feskorperforsch, D-70569 Stuttgart, Germany
[3] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA
[4] Samsung Adv Inst Technol, Suwon, South Korea
关键词
donor-bound excitons; time-resolved luminescence;
D O I
10.1016/j.jlumin.2004.09.044
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Time-resolved photoluminescence measurements of high-quality GaN show that the spectra of two-electron satellites (TES) in GaN include also lines coming from excited states of a donor-bound exciton ((DX)-X-0) complex. The lines connected with recombination from the ground and excited states have generally similarly long lifetimes (1.1-1.4 ns, in the case of an exciton bound to oxygen donor). However, analysis of initial dynamics (between 0 and 0.5 ns) shows some transfer of energy between the lines. In fact, the ground-state-related line reaches its maximum 0.1 ns after the excited-state-related line. A rate-equation model taking into account internal transitions in the (DX)-X-0 complex gives a characteristic internal time constant of about 0.2 ns. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:30 / 33
页数:4
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