Multilayer structures induced by plasma and laser beam treatments on a-Si:H and a-SiC:H thin films

被引：22
|
作者：
Mitu, B
Dinescu, G
Dinescu, M
Ferrari, A
Balucani, M
Lamedica, G
Dementjev, AP
Maslakov, KI
机构：
[1] Natl Inst Laser Plasma & Radiat Phys, Bucharest 76900, Romania
[2] Univ La Sapienza, INFM, Unit E6, Rome, Italy
来源：
THIN SOLID FILMS | 2001年 / 383卷 / 1-2期
关键词：
carbon nitride; silicon carbide; silicon carbonitride; plasma treatment; laser irradiation;
D O I：
10.1016/S0040-6090(00)01612-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Si/SiH/CNx and Si/SiC/CNx film structures have been obtained in a two step procedure: a-Si:H and a-SiC:H thin films have been deposited by PECVD from CH4/SiH4 precursors; CNx films have been prepared by exposing the previous obtained samples to a RF plasma beam discharge generated in nitrogen with graphite electrodes. Several samples were submitted to KrF laser irradiation and treated at various incident laser fluences. The samples have been investigated by in depth X-ray Photoelectron Spectroscopy (XPS), Fourier Transform Infrared Spectroscopy (FTIR) and X-Ray Diffraction (XRD). Chemical and structural modifications are induced by the treatments. The promotion of Si-C bonds and the build-up of an intermediate SiCN layer at the a-Si:H/CNx and a-SiC:H/CNx interfaces are proven. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：230 / 234
页数：5
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