Extended vapor-liquid-solid growth and field emission properties of aluminium nitride nanowires

被引：136

作者：

Wu, Q

Hu, Z ^{[1
]}

Wang, XZ

Lu, YN

Huo, KF

Deng, SZ

Xu, NS

Shen, B

Zhang, R

Chen, Y

机构：

[1] Nanjing Univ, Lab Mesoscop Mat Sci, Nanjing 210093, Peoples R China

[2] Nanjing Univ, Jiangsu Prov Lab Nanotechnol, Dept Chem, Nanjing 210093, Peoples R China

[3] Nanjing Technol Univ, Coll Mat Sci & Engn, Electron Microscopy Lab, Nanjing 210009, Peoples R China

[4] Zhongshan Univ, Dept Phys, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Peoples R China

[5] Nanjing Univ, Dept Phys, Lab Mesoscop Mat Sci, Nanjing 210093, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2003年 / 13卷 / 08期

关键词：

D O I：

10.1039/b303987k

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Hexagonal AlN (h-AlN) nanowires with an average diameter of around 15 nm have been prepared by an extended vapor - liquid - solid growth technique and characterized by X-ray diffraction, transmission electron microscopy, energy dispersive X-ray analysis, Raman spectroscopy and field emission measurements. This preparation is a rather simple route for bulk fabrication of h-AlN nanowires. The promising field emission property observed for h-AlN nanowires points to the important application potential of this material.

引用

页码：2024 / 2027

页数：4

共 23 条

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