Fabrication of topographically microstructured titanium silicide interface for advanced photonic applications

被引：14

作者：

Hannula, M. ^{[1
]}

Lahtonen, K. ^{[1
]}

Ali-Loytty, H. ^{[1
]}

Zakharov, A. A. ^{[2
]}

Isotalo, T. ^{[1
]}

Saari, J. ^{[1
]}

Valden, M. ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, Surface Sci Lab, POB 692, FI-33101 Tampere, Finland

[2] Lund Univ, MAX Lab 4, POB 118, SE-22100 Lund, Sweden

来源：

SCRIPTA MATERIALIA | 2016年 / 119卷

基金：

芬兰科学院;

关键词：

Atomic layer deposition (ALD); X-ray photoelectron spectroscopy (XPS); Transition metal silicides; Semiconductors; Surface modification; WATER OXIDATION; TISI2; SI; PHOTOANODES; MORPHOLOGY; STABILITY; FILMS; TIO2;

D O I：

10.1016/j.scriptamat.2016.03.016

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present a widely scalable, high temperature post-growth annealing method for converting ultra-thin films of TiO2 grown by atomic layer deposition to topographically microstructured titanium silicide (TiSi). The photo emission electron microscopy results reveal that the transformation from TiO2 to TiSi at 950 degrees C proceeds via island formation. Inside the islands, TiO2 reduction and Si diffusion play important roles in the formation of the highly topographically microstructured TiSi interface with laterally nonuniform barrier height contact. This is advantageous for efficient charge transfer in Si-based heterostructures for photovoltaic and photoelectrochemical applications. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：76 / 81

页数：6

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