Collective effects in SiGe/Si quantum wells

被引：0

作者：

Bagaev, V. S. ^{[1
]}

Krivobok, V. S. ^{[1
]}

Nikolaev, S. N. ^{[1
]}

Novikov, A. V. ^{[2
]}

Onishchenko, E. E. ^{[1
]}

Zaitsev, V. V. ^{[1
]}

机构：

[1] Russian Acad Sci, PN Lebedev Phys Inst, Leninskii Pr 53, Moscow 119991, Russia

[2] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

PHYSICS OF SEMICONDUCTORS | 2009年 / 1199卷

关键词：

exciton; electon-hole plasma; Mott transition; quantum wells; ELECTRON-HOLE LIQUID;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have carried out temperature and power-dependent studies of the photoluminescence properties of a set of SiGe/Si quantum wells. Our aim was to investigate the features of the exciton - gas electron-hole plasma transition (Mott transition) in such structures. An analysis of the electron-hole plasma band shape allows us to determine the electron-hole pair density for various levels of pumping power and temperatures; particularly, a pair density range within which the Mott transition takes place was estimated. It was shown that excitons and plasma in SiGe/Si quantum wells can coexist in a wide range of carrier density.

引用

页码：189 / +

页数：2

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