Correlation of atomic force microscopy and photoluminescence analysis of GaAs nanocrystallites elaborated by electrochemical etching of n+ type GaAs

被引：1

作者：

Abdellaoui, T. ^{[1
]}

Bardaoui, A. ^{[1
]}

Daoudi, M. ^{[1
]}

Chtourou, R. ^{[1
]}

机构：

[1] Ctr Rech & Technol Energie, Lab Photovolta Semicond & Nanostruct, Hammam Lif 2050, Tunisia

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2010年 / 51卷 / 02期

关键词：

POROUS GAAS; MORPHOLOGY; SURFACE; BLUE; GAP;

D O I：

10.1051/epjap/2010092

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs nanocrystallites are elaborated by electrochemical etching of n(+) type GaAs substrates. Photoluminescence (PL) and atomic force microscope (AFM) images analysis are used to study the porous layers obtained with different etching times. Two kind of quantum confinement due to the formation of two nanostructures of different sizes are observed from room temperature photoluminescence (RTPL) spectra. The surface topography and the density of grains of the porous GaAs (p-GaAs) samples are investigated using the AFM technique. AFM images showed that the structure of films was nanocrystalline with a grain size close to 7 nm, this was confirmed by photoluminescence spectroscopy (PL) and the effective mass theory.

引用

页数：4

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