Electroluminescence of erbium-oxygen-doped silicon diodes grown by molecular beam epitaxy

被引：140

作者：

Stimmer, J

Reittinger, A

Nutzel, JF

Abstreiter, G

Holzbrecher, H

Buchal, C

机构：

[1] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, ZCH, D-52425 JULICH, GERMANY

[2] FORSCHUNGSZENTRUM JULICH, FORSCHUNGSZENTRUM, ISI 2, D-52425 JULICH, GERMANY

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 23期

关键词：

D O I：

10.1063/1.116577

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated erbium-oxygen-doped silicon light emitting diodes with molecular beam epitaxy by simultaneously evaporating erbium and silicon and providing a suitable background pressure of oxygen. In reverse bias, the diodes show intense room-temperature electroluminescence at lambda = 1.54 mu m originating from the intra-4f transition or erbium. This luminescence does not show temperature quenching between 4 and 300 K. In forward bias the erbium peak intensity is reduced by a factor of 30 at low temperatures and shows temperature quenching. (C) 1996 American Institute of Physics.

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页码：3290 / 3292

页数：3

相关论文

共 14 条

[1] OPTICAL ACTIVATION AND EXCITATION MECHANISMS OF ER IMPLANTED IN SI [J].

COFFA, S ;

PRIOLO, F ;

FRANZO, G ;

BELLANI, V ;

CARNERA, A ;

SPINELLA, C .

PHYSICAL REVIEW B, 1993, 48 (16) :11782-11788

[2] TEMPERATURE-DEPENDENCE AND QUENCHING PROCESSES OF THE INTRA-4F LUMINESCENCE OF ER IN CRYSTALLINE SI [J].

COFFA, S ;

FRANZO, G ;

PRIOLO, F ;

POLMAN, A ;

SERNA, R .

PHYSICAL REVIEW B, 1994, 49 (23) :16313-16320

[3] RECOMBINATION PROCESSES IN ERBIUM-DOPED MBE SILICON [J].

EFEOGLU, H ;

EVANS, JH ;

JACKMAN, TE ;

HAMILTON, B ;

HOUGHTON, DC ;

LANGER, JM ;

PEAKER, AR ;

PEROVIC, D ;

POOLE, I ;

RAVEL, N ;

HEMMENT, P ;

CHAN, CW .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (02) :236-242

[4] 1.54-MU-M ELECTROLUMINESCENCE OF ERBIUM-DOPED SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J].

ENNEN, H ;

POMRENKE, G ;

AXMANN, A ;

EISELE, K ;

HAYDL, W ;

SCHNEIDER, J .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :381-383

[5] ROOM-TEMPERATURE ELECTROLUMINESCENCE FROM ER-DOPED CRYSTALLINE SI [J].

FRANZO, G ;

PRIOLO, F ;

COFFA, S ;

POLMAN, A ;

CARNERA, A .

APPLIED PHYSICS LETTERS, 1994, 64 (17) :2235-2237

[6]

JAUMANN M, IN PRESS APPL SURF S

[7] 1.54-MU-M WAVELENGTH EMISSION OF ERBIUM-DOPED SILICON FILMS GROWN BY ION-BEAM EPITAXY USING SPUTTERING-TYPE METAL-ION SOURCE [J].

MATSUOKA, M ;

TOHNO, S .

APPLIED PHYSICS LETTERS, 1995, 66 (15) :1862-1864

[8] IMPURITY ENHANCEMENT OF THE 1.54-MU-M ER3+ LUMINESCENCE IN SILICON [J].

MICHEL, J ;

BENTON, JL ;

FERRANTE, RF ;

JACOBSON, DC ;

EAGLESHAM, DJ ;

FITZGERALD, EA ;

XIE, YH ;

POATE, JM ;

KIMERLING, LC .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (05) :2672-2678

[9] COMPARISON OF P AND SB AS N-DOPANTS FOR SI MOLECULAR-BEAM EPITAXY [J].

NUTZEL, JF ;

ABSTREITER, G .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (02) :937-940

[10] THE ERBIUM-IMPURITY INTERACTION AND ITS EFFECTS ON THE 1.54 MU-M LUMINESCENCE OF ER3+ IN CRYSTALLINE SILICON [J].

PRIOLO, F ;

FRANZO, G ;

COFFA, S ;

POLMAN, A ;

LIBERTINO, S ;

BARKLIE, R ;

CAREY, D .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) :3874-3882