Band structure, metallization, and superconductivity of GaAs and InAs under high pressure

被引:4
作者
Amalraj, A. [1 ]
Louis, C. Nirmala [2 ]
Jayam, S. R. Gerardin [2 ]
机构
[1] Coll Holy Cross, Dept Chem, Nagercoil 629004, Tamil Nadu, India
[2] Coll Holy Cross, Dept Phys, Nagercoil 629004, Tamil Nadu, India
关键词
metallization; superconductivity; GaAs and InAs; high pressure;
D O I
10.1142/S0219633607003416
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The electronic band structure, metallization, structural phase transition, and superconductivity of cubic zinc blende type GaAs and InAs are investigated. The equilibrium lattice constant, bulk modulus, and the phase transition pressure at which the compounds undergo structural phase transition from ZnS to NaCl are predicted from the total energy calculations. The density of states at the Fermi level (N(E-F)) get enhanced after metallization, which leads to the superconductivity in GaAs and InAs. The superconducting transition temperatures (T-c) of GaAs and InAs are obtained as a function of pressure for both the ZnS and NaCl structures. GaAs and InAs come under the class of pressure-induced superconductors. When pressure is increased T-c increases in both the normal and high pressure-structures. The dependence of T-c on electron-phonon mass enhancement factor lambda shows that GaAs and InAs are electron-phonon-mediated superconductors. Also, it is found that GaAs and InAs retained in their normal structure under high pressure give appreciably high T-c.
引用
收藏
页码:833 / 843
页数:11
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