Dual-color-sub-bandgap-light-excited isothermal capacitance transient spectroscopy for quick measurement of carbon-related hole trap density in n-type GaN

被引：5

作者：

Kanegae, Kazutaka ^{[1
]}

Narita, Tetsuo ^{[2
]}

Tomita, Kazuyoshi ^{[2
]}

Kachi, Tetsu ^{[3
]}

Horitata, Masahiro ^{[1
,3
,4
]}

Kimoto, Tsunenobu ^{[1
]}

Suda, Jun ^{[1
,3
,4
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan

[2] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan

[3] Inst Mat & Syst Sustainabil IMaSS, Nagoya, Aichi 4648601, Japan

[4] Nagoya Univ, Dept Elect, Nagoya, Aichi 4648601, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / SG期

关键词：

D O I：

10.35848/1347-4065/ab6863

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A quick method is proposed for measurement of the carbon-related hole trap (H1: E-v+0.87 eV) density in an n-type GaN homoepitaxial layer using dual-color-sub-bandgap-light-excitedisothermal capacitance transient spectroscopy. Shorter wavelength (390 nm) light irradiation is employed to cause the hole traps to be in the hole-occupied state. Longer wavelength (660 nm) light irradiation is then used to emit the hole from the trap to the valence band. The photoemission of holes is much quicker than the thermal emission, which reduces the measurement time. The trap density can be calculated from the capacitance transient. (C) 2020 The Japan Society of Applied Physics

引用

页数：3