High-density growth of horizontally aligned carbon nanotubes for interconnects

We demonstrate growth of horizontally aligned carbon nanotubes (CNTs) from a vertical, conductive surface for use as horizontal interconnects in integrated circuits. This is achieved by using a CMOS compatible metal, CoSi2, as the catalyst support and contact, and Fe as the catalyst. The Fe is patterned by tilt evaporation, and cold-wall chemical vapor deposition achieves a nanotube wall density of similar to 6 x 10(11) cm(-2). Electrical measurements show that both outer and some inner walls carry current, demonstrating a promising method for growing nanoscale horizontal interconnects. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim