A systematic method for simulating total ionizing dose effects using the finite elements method

被引：8
作者：
Chatzikyriakou, Eleni [1 ]
Potter, Kenneth [1 ]
de Groot, C. H. [1 ]
机构：
[1] Univ Southampton, Dept Elect & Comp Sci, Univ Rd, Southampton SO17 1BJ, Hants, England
来源：
JOURNAL OF COMPUTATIONAL ELECTRONICS | 2017年 / 16卷 / 03期
基金：
英国工程与自然科学研究理事会;
关键词：
Total ionizing dose; Carrier transport; Finite elements method; Synopsys; MOS; ELECTRONIC-STRUCTURE; CENTERS; HYDROGEN; DEFECTS; QUARTZ;
D O I：
10.1007/s10825-017-1027-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Simulation of total ionizing dose effects in field isolation of FET technologies requires transport mechanisms in the oxide to be considered. In this work, carrier transport and trapping in thick oxides using the finite elements method in the Synopsys Sentaurus platform are systematically simulated. Carriers are generated in the oxide and are transported out through a direct contact with the gate and thermionic emission to the silicon. The method is applied to calibrate experimental results of 400nm SiO2 capacitors irradiated at total doses of 11.6 kRad (SiO2) and 58 kRad (SiO2). Drift-diffusion-enabled trapping as well as other issues that arise from the involved physics are discussed. Effective bulk trap densities and activation energies of the traps are extracted.
引用
收藏
页码：548 / 555
页数：8
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