Optical studies of nonequilibrium carrier dynamics in highly excited 4H-SiC epitaxial layers

被引：8
|
作者：
Neimontas, K [1 ]
Aleksiejunas, R
Sudzius, M
Jarasiunas, K
Bergman, JP
机构：
[1] Vilnius State Univ, Inst Mat Sci & Appl Res, LT-10222 Vilnius, Lithuania
[2] Linkoping Univ, Dept Phys & Measurement Technol, SE-58183 Linkoping, Sweden
来源：
SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷
关键词：
4H-SiC; four-wave mixing; carrier diffusion and recombination;
D O I：
10.4028/www.scientific.net/MSF.483-485.413
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We applied picosecond four-wave mixing technique to investigate carrier diffusion and recombination in n-type 4H-SiC epilayers. The dependence of bipolar diffusion coefficient D on photocarrier density was measured in range from similar to 10(17) to 10(20) Cm-3. We determined a decrease of D value from 3.4 to 2.2 cm(2)/S with increase of the photoexcitation level in range from similar to 10(17) to similar to 10(19) cm(-3), and found its increase up to 3.8 cm(2)/s at carrier density above 1020 cm(-3). Auger recombination governed decrease of carrier lifetime from 11 ns at similar to 10(17) cm(-3) to 1.8 ns at similar to 10(20) cm(3) has also been observed.
引用
收藏
页码：413 / 416
页数：4
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