Long-wavelength vertical-cavity lasers and amplifiers

被引：72
|
作者：
Karim, A [1 ]
Björlin, S [1 ]
Piprek, J [1 ]
Bowers, JE [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2000年 / 6卷 / 06期
关键词：
distributed Bragg reflectors; Fabry-Perot resonators; laser amplifiers; optical pumping; optical resonators; semiconductor lasers; semiconductor optical amplifiers; surface-emitting lasers; vertical-cavity lasers; wafer bonding;
D O I：
10.1109/2944.902174
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on advances in vertical-cavity surface-emitting lasers (VCSELs) and vertical-cavity semiconductor optical amplifiers (VCSOAs) operating at 1.3 and 1.55 mum. These devices have the potential to dramatically reduce manufacturing costs compared to traditional in-plane devices, while allowing for the possibility of producing integrated modules and arrays on wafer. A number of different technologies have been proposed and demonstrated for these devices. In this paper, we discuss the different materials systems used for distributed Bragg reflectors (DBRs) and active regions. Recent designs and results are summarized. Wafer bonded VCSELs and VCSOAs are examined in detail.
引用
收藏
页码：1244 / 1253
页数：10
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