Dependence of damage efficiency of ions in diamond on electronic stopping

被引：7
|
作者：
Friedland, E [1 ]
Carstanjen, HD
Myburg, G
Nasr, MA
机构：
[1] Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa
[2] Max Planck Inst Met Res, D-70569 Stuttgart, Germany
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2005年 / 230卷
关键词：
diamond; ion implantation; phase transition;
D O I：
10.1016/j.nimb.2004.12.030
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Natural diamond single crystals were irradiated at room temperature with 75 keV carbon and 80 keV argon ions at fluences exceeding the graphitization dose. The resulting damage depth profiles before and after rapid annealing at 1500 K were obtained by alpha-particle channeling analysis. Measurements were done both at back- and forward scattering angles using conventional surface barrier detectors and an electrostatic analyzer system, respectively. Boundary positions of the graphitic layers were determined and compared with the corresponding depth-dependent elastic and inelastic energy deposition graphs to extract critical damage energy densities. The obtained values increase strongly with inelastic energy deposition rate, indicating a significant reduction of the ions' damage efficiency due to irradiation induced annealing by electronic stopping. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：129 / 135
页数：7
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