Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates

被引：1

作者：

Abramkin, D. S. ^{[1
,2
]}

Petrushkov, M. O. ^{[1
]}

Putyato, M. A. ^{[1
]}

Semyagin, B. R. ^{[1
]}

Shamirzaev, T. S. ^{[1
,2
,3
]}

机构：

[1] Russian Acad Sci, Siberian Branch, Inst Semicond Phys, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Novosibirsk 630090, Russia

[3] Ural Fed Univ, Ekaterinburg 620002, Russia

来源：

SEMICONDUCTORS | 2018年 / 52卷 / 11期

基金：

俄罗斯科学基金会;

关键词：

ATOMIC-HYDROGEN; SI; EPITAXY; PHOTOLUMINESCENCE; PERFECTION; DEFECTS; LAYERS;

D O I：

10.1134/S1063782618110039

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Heterostructures with InAs/AlAs quantum dots are grown on GaAs/Si hybrid substrates. The experimentally observed low-temperature (5-80 K) photoluminescence spectra of InAs/AlAs/GaAs/Si heterostructures exhibit bands defined by excitonic recombination in quantum dots and a wetting layer, i.e., a thin quantum well lying at the base of the array of quantum dots. Temperature quenching of the photoluminescence of quantum dots occurs due to the direct trapping of charge carriers at defects localized in the AlAs matrix, in the vicinity of the quantum dots.

引用

页码：1484 / 1490

页数：7

共 24 条

[1] Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers [J].

Abramkin D.S. ;

Petrushkov M.O. ;

Emel’yanov E.A. ;

Putyato M.A. ;

Semyagin B.R. ;

Vasev A.V. ;

Esin M.Y. ;

Loshkarev I.D. ;

Gutakovskii A.K. ;

Preobrazhenskii V.V. ;

Shamirzaev T.S. .

Optoelectronics, Instrumentation and Data Processing, 2018, 54 (02) :181-186

[2] Heterostructures with diffused interfaces: Luminescent technique for ascertainment of band alignment type [J].

Abramkin, D. S. ;

Gutakovskii, A. K. ;

Shamirzaev, T. S. .

JOURNAL OF APPLIED PHYSICS, 2018, 123 (11)

[3] Formation and crystal structure of GaSb/GaP quantum dots [J].

Abramkin D.S. ;

Emelyanov E.A. ;

Putyato M.A. ;

Gutakovskii A.K. ;

Kozhukhov A.S. ;

Semyagin B.R. ;

Preobrazhenskii V.V. ;

Shamirzaev T.S. .

Bulletin of the Russian Academy of Sciences: Physics, 2016, 80 (01) :17-22

[4] GaAs epitaxy on Si substrates: modern status of research and engineering [J].

Bolkhovityanov, Yu B. ;

Pchelyakov, O. P. .

PHYSICS-USPEKHI, 2008, 51 (05) :437-456

[5] Disorder and the Urbach edge in dilute bismide GaAsBi [J].

Gogineni, Chaturvedi ;

Riordan, Nathaniel A. ;

Johnson, Shane R. ;

Lu, Xianfeng ;

Tiedje, Tom .

APPLIED PHYSICS LETTERS, 2013, 103 (04)

[6] Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy [J].

Grassman, T. J. ;

Brenner, M. R. ;

Rajagopalan, S. ;

Unocic, R. ;

Dehoff, R. ;

Mills, M. ;

Fraser, H. ;

Ringel, S. A. .

APPLIED PHYSICS LETTERS, 2009, 94 (23)

[7]

Harrison W.A., 2012, Electronic Structure and the Properties of Solids: The Physics of the Chemical Bond

[8]

Klingshirn C.F., 2006, SEMICONDUCTOR OPTICS

[9] RADIATIVE STATES IN TYPE-II GASB/GAAS QUANTUM-WELLS [J].

LEDENTSOV, NN ;

BOHRER, J ;

BEER, M ;

HEINRICHSDORFF, F ;

GRUNDMANN, M ;

BIMBERG, D .

PHYSICAL REVIEW B, 1995, 52 (19) :14058-14066

[10]

MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/S0022-0248(74)80055-2

← 1 2 3 →