共 8 条
[1]
Growth condition dependence of structure and surface morphology of GaN films on (III)GaAs substrates prepared by reactive sputtering
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,
2004, 22 (04)
:1290-1292
[2]
Formation of β-C3N4 nanocrystals in Ti-doped carbon nitride films prepared by cathode arc-assisted middle-frequency magnetron sputtering
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
2006, 45 (20-23)
:L562-L564
[4]
Effect of substrate temperature on crystal orientation and residual stress in radio frequency sputtered gallium-nitride films
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,
2004, 22 (04)
:1587-1590
[6]
Gallium nitride thin films deposited by radio-frequency magnetron sputtering
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,
2006, 24 (04)
:1096-1099