Combined effects of thermal treatment and Er-substitution on phase formation, microstructure, and dielectric responses of Bi4Ti3O12 Aurivillius ceramics
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作者:
Wong, Y. J.
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Univ Putra Malaysia, Inst Adv Technol ITMA, Adv Mat & Nanotechnol Lab, Serdang 43400, Selangor, MalaysiaUniv Putra Malaysia, Inst Adv Technol ITMA, Adv Mat & Nanotechnol Lab, Serdang 43400, Selangor, Malaysia
Wong, Y. J.
[1
]
Hassan, J.
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Univ Putra Malaysia, Inst Adv Technol ITMA, Adv Mat & Nanotechnol Lab, Serdang 43400, Selangor, Malaysia
Univ Putra Malaysia, Fac Sci, Dept Phys, Serdang 43400, Selangor, MalaysiaUniv Putra Malaysia, Inst Adv Technol ITMA, Adv Mat & Nanotechnol Lab, Serdang 43400, Selangor, Malaysia
Hassan, J.
[1
,2
]
Chen, S. K.
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Univ Putra Malaysia, Inst Adv Technol ITMA, Adv Mat & Nanotechnol Lab, Serdang 43400, Selangor, Malaysia
Univ Putra Malaysia, Fac Sci, Dept Phys, Serdang 43400, Selangor, MalaysiaUniv Putra Malaysia, Inst Adv Technol ITMA, Adv Mat & Nanotechnol Lab, Serdang 43400, Selangor, Malaysia
Chen, S. K.
[1
,2
]
Ismail, I.
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Univ Putra Malaysia, Inst Adv Technol ITMA, Adv Mat & Nanotechnol Lab, Serdang 43400, Selangor, MalaysiaUniv Putra Malaysia, Inst Adv Technol ITMA, Adv Mat & Nanotechnol Lab, Serdang 43400, Selangor, Malaysia
Ismail, I.
[1
]
机构:
[1] Univ Putra Malaysia, Inst Adv Technol ITMA, Adv Mat & Nanotechnol Lab, Serdang 43400, Selangor, Malaysia
[2] Univ Putra Malaysia, Fac Sci, Dept Phys, Serdang 43400, Selangor, Malaysia
The combined effects of thermal treatment and single erbium (Er3+) ion-substitution (x = 0.75) on the A-site of Bi4-xErxTi3O12 compounds were investigated by scrutinizing the crystal structure, microstructural evolution, and dielectric properties. The results are compared with those of pure Bi4Ti3O12 compounds. Upon doping, the crystal structures experienced strong octahedral distortions, resulting in phase transformation from orthorhombic to monoclinic symmetry. The doped samples became highly anisotropic with increasing sintering temperature, which are accompanied by negative thermal expansion. Following the phase transformation, plate-like grains emerged at the expense of equiaxed grains, becoming more dominant as grain growth increased with sintering temperature. The grain growth rate is comparatively slower in the doped samples, implying the inhibiting role of Er. The doped samples showed relatively small loss of epsilon '' characterized by shorter relaxation times, which compromised the dielectric constant epsilon' due to the suppression of oxygen vacancies that is closely related to the smaller grain sizes and densities. Both epsilon' and epsilon '' of pure and doped samples are grain size dependent, in which the frequency responses followed the superposition of Cole-Cole and Havriliak-Negami distribution functions that correlates with the impedance studies. (C) 2017 Elsevier B.V. All rights reserved.
机构:
Shanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Tang, Yanxue
Shen, Zong-Yang
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Jingdezhen Ceram Inst, Sch Mat Sci & Engn, China Natl Light Ind Key Lab Funct Ceram Mat, Jingdezhen 333403, Peoples R ChinaShanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Shen, Zong-Yang
Du, Qiuxiang
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Shanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Du, Qiuxiang
Zhao, Xiangyong
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Shanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Zhao, Xiangyong
Wang, Feifei
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Shanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Wang, Feifei
Qin, Xiaomei
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Shanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Qin, Xiaomei
Wang, Tao
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Shanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Wang, Tao
Shi, Wangzhou
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Shanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Shi, Wangzhou
Sun, Dazhi
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Shanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R ChinaShanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Sun, Dazhi
Zhou, Zhiyong
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机构:
Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 201800, Peoples R ChinaShanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
Zhou, Zhiyong
Zhang, Shujun
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Univ Wollongong, Inst Superconducting & Elect Mat, Australian Inst Innovat Mat, Wollongong, NSW 2500, AustraliaShanghai Normal Univ, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China
机构:
Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210008, Peoples R China
Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210008, Peoples R ChinaNanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210008, Peoples R China
Wu, Di
Yang, Bin
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Harbin Inst Technol, Ctr Condensed Matter Sci & Technol, Harbin 150006, Peoples R ChinaNanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210008, Peoples R China
Yang, Bin
Li, Aidong
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Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210008, Peoples R China
Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210008, Peoples R ChinaNanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210008, Peoples R China
机构:
Ioffe Inst, Ul Politechnicheskaya 26, St Petersburg 194021, RussiaIoffe Inst, Ul Politechnicheskaya 26, St Petersburg 194021, Russia
Lomanova, N. A.
Tomkovich, M. V.
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Ioffe Inst, Ul Politechnicheskaya 26, St Petersburg 194021, RussiaIoffe Inst, Ul Politechnicheskaya 26, St Petersburg 194021, Russia
Tomkovich, M. V.
Ugolkov, V. L.
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Russian Acad Sci, Grebenshchikov Inst Silicate Chem, Ul Tiflisskaya 3-6, St Petersburg 199034, RussiaIoffe Inst, Ul Politechnicheskaya 26, St Petersburg 194021, Russia
Ugolkov, V. L.
Gusarov, V. V.
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Ioffe Inst, Ul Politechnicheskaya 26, St Petersburg 194021, RussiaIoffe Inst, Ul Politechnicheskaya 26, St Petersburg 194021, Russia