Current Transport, Photosensitive, and Dielectric Properties of PVA/n-Si Heterojunction Photodiode

被引：12
作者：
Ashery, A. [1 ]
Gaballah, A. E. H. [2 ]
Turky, G. M. [3 ]
机构：
[1] Natl Res Ctr, Solid State Phys Dept, Phys Res Div, Solid State Elect Lab, 33 El Bohouth St, Giza 12622, Egypt
[2] Natl Inst Stand NIS, Photometry & Radiometry Div, Tersa St, Giza 12211, Egypt
[3] Natl Res Ctr, Microwave Phys & Dielect Dept, Phys Div, Giza 12622, Egypt
来源：
SILICON | 2022年 / 14卷 / 09期
关键词：
PVA; n-Si heterojunction diode; I-V and C-V characterization; AC conductivity; Impedance spectroscopy; SCHOTTKY-BARRIER DIODES; SERIES RESISTANCE; ELECTRICAL-CONDUCTIVITY; SURFACE-STATES; AL/P-SI; DEPENDENCE; FREQUENCY; PROFILES; PERFORMANCE; PARAMETERS;
D O I：
10.1007/s12633-021-01260-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The results showed that the annealing of polyvinyl alcohol (PVA) at 450 K has improved its electrical conductivity. Scientists had previously overlooked its great characteristics because of its insulating properties however, PVA showed a considerable increase in conductivity, making it a promising material for optoelectronic devices. The electrical and dielectric properties of PVA/n-Si heterostructure were investigated. The ideality factor, barrier height, and series resistance were measured at different temperatures using various approaches as Nord, Chueng, and the conventional method. A detailed analysis of Ac conductivity, real and imaginary parts of the impedance (Z', Z") were examined at different temperatures, voltages, and frequencies. The results showed that the value of the imaginary part of the impedance Z" changes with temperature, voltage, and frequency; however, the novelty here is that Z" only takes positive values if the frequency is set to a very low value, such as 10 Hz. The photocurrent properties were also studied confirming that PVA/n-Si structure is responsive to daylight illumination.
引用
收藏
页码：4633 / 4646
页数：14
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