Low-Reverse Recovery Charge Superjunction MOSFET With a p-Type Schottky Body Diode

被引：35

作者：

Lin, Zhi ^{[1
,2
]}

Hu, Shengdong ^{[1
,2
]}

Yuan, Qi ^{[1
,2
]}

Zhou, Xichuan ^{[1
,2
]}

Tang, Fang ^{[1
,2
]}

机构：

[1] Chongqing Univ, Minist Educ, Key Lab Dependable Serv Comp Cyber Phys Soc, Chongqing 400044, Peoples R China

[2] Chongqing Univ, Coll Commun Engn, Chongqing Engn Lab High Performance Integrated Ci, Chongqing 400044, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Superjunction; power MOSFET; bodydiode; p-type Schottky contact; reverse recovery;

D O I：

10.1109/LED.2017.2713519

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel low-reverse recovery charge superjunction MOSFET (SJ-MOSFET) with a p-type Schottky body diode is proposed in this letter. The device has a p-type Schottky contact on the p-pillar at the drain side. Electrons are prevented from injecting into the drain side by the p-type Schottky contact, and the total carrier concentration is greatly reduced. Compared with the conventional device, the proposed SJ-MOSFET has a lower reverse recovery charge and a larger soft factor. Simulated results show that the reverse recovery charge is reduced by 81.3% and 76.0% at 300 K and 400 K, respectively, with a metal work function of 4.5 eV. The optimized metal work function range is 4.3-4.6 eV.

引用

页码：1059 / 1062

页数：4

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