Electronic structure of CdTe nanocrystals:: a tight-binding study

被引:27
作者
Pérez-Conde, J [1 ]
Bhattacharjee, AK
机构
[1] Univ Publ Navarra, Dept Fis, E-31006 Pamplona, Spain
[2] Univ Paris Sud, Phys Solides Lab, CNRS, URA, F-91405 Orsay, France
关键词
nanostructures; semiconductors; electronic band structure; optical properties;
D O I
10.1016/S0038-1098(99)00064-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We present a symmetry-based calculation of the electronic structure of a compound semiconductor quantum dot (QD) in the sp(3)s* tight-binding model including the spin-orbit interaction. The Hamiltonian matrix is diagonalized exactly for CdTe QD sizes up to 60 Angstrom. The surface dangling bonds are passivated by hydrogen through a careful analysis of the density of states and wave functions. The calculated size dependence of the energy gap shows a reasonable agreement with the available experimental data. Our symmetry analysis indicates that, in contrast with a reported prediction of the three-band effective-mass model, the fundamental interband transition remains dipole-allowed in CdTe nanocrystals. (C) 1999 Elsevier Science Ltd. AU rights reserved.
引用
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页码:259 / 264
页数:6
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