Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxy

被引：22
|
作者：
Schramm, A. [1 ]
Tommila, J. [1 ]
Strelow, C. [2 ]
Hakkarainen, T. V. [1 ]
Tukiainen, A. [1 ]
Dumitrescu, M. [1 ]
Mews, A. [2 ]
Kipp, T. [2 ]
Guina, M. [1 ]
机构：
[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland
[2] Univ Hamburg, Inst Phys Chem, DE-20146 Hamburg, Germany
来源：
NANOTECHNOLOGY | 2012年 / 23卷 / 17期
基金：
芬兰科学院;
关键词：
GAAS;
D O I：
10.1088/0957-4484/23/17/175701
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present the growth of single, site-controlled InAs quantum dots on GaAs templates using UV-nanoimprint lithography and molecular beam epitaxy. A large quantum dot array with a period of 1.5 mu m was achieved. Single quantum dots were studied by steady-state and time-resolved micro-photoluminescence experiments. We obtained single exciton emission with a linewidth of 45 mu eV. In time-resolved experiments, we observed decay times of about 670 ps. Our results underline the potential of nanoimprint lithography and molecular beam epitaxy to create large-scale, single quantum dot arrays.
引用
收藏
页数：4
相关论文
共 50 条
  • [41] Molecular beam epitaxial growth of site-controlled InAs quantum dot arrays using templates fabricated by the Nano-Jet Probe method
    Ohkouchi, S.
    Sugimoto, Y.
    Ozaki, N.
    Ishikawa, H.
    Asakawa, K.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (06): : 1794 - 1796
  • [42] Effects of nano-pattern size on the property of InAs site-controlled quantum dots
    Cheng, Chien-Chia
    Meneou, K.
    Cheng, K. Y.
    JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) : 180 - 182
  • [43] Single photon emission from site-controlled pyramidal quantum dots
    Baier, MH
    Pelucchi, E
    Kapon, E
    Varoutsis, S
    Gallart, M
    Robert-Philip, I
    Abram, I
    APPLIED PHYSICS LETTERS, 2004, 84 (05) : 648 - 650
  • [44] Site-controlled growth of single GaN quantum dots in nanowires by MOCVD
    Choi, Kihyun
    Arita, Munetaka
    Kako, Satoshi
    Arakawa, Yasuhiko
    JOURNAL OF CRYSTAL GROWTH, 2013, 370 : 328 - 331
  • [45] Effects of lateral quantum dot pitch on the formation of vertically aligned InAs site-controlled quantum dots
    Yang, T
    Kohmoto, S
    Nakamura, H
    Asakawa, K
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (02) : 1190 - 1194
  • [46] Site-controlled droplet epitaxy of GaAs quantum dots by deposition through shadow masks
    Zolatanosha, Viktoryia
    Reuter, Dirk
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018, 36 (02):
  • [47] Site-controlled InAs quantum dots grown on a 55 nm thick GaAs buffer layer
    Pfau, T. J.
    Gushterov, A.
    Reithmaier, J. P.
    Cestier, I.
    Eisenstein, G.
    Linder, E.
    Gershoni, D.
    APPLIED PHYSICS LETTERS, 2009, 95 (24)
  • [48] InAs self-assembled quantum dots on InP by molecular beam epitaxy
    Fafard, S
    Wasilewski, Z
    McCaffrey, J
    Raymond, S
    Charbonneau, S
    APPLIED PHYSICS LETTERS, 1996, 68 (07) : 991 - 993
  • [49] Gallium-assisted deoxidation of patterned substrates for site-controlled growth of InAs quantum dots
    Atkinson, P.
    Schmidt, O. G.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 1815 - 1818
  • [50] Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy
    Fan, Dongsheng
    Zeng, Zhaoquan
    Dorogan, Vitaliy G.
    Hirono, Yusuke
    Li, Chen
    Mazur, Yuriy I.
    Yu, Shui-Qing
    Johnson, Shane R.
    Wang, Zhiming M.
    Salamo, Gregory J.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2013, 24 (05) : 1635 - 1639
12345