Large array of single, site-controlled InAs quantum dots fabricated by UV-nanoimprint lithography and molecular beam epitaxy

被引：22

作者：

Schramm, A. ^{[1
]}

Tommila, J. ^{[1
]}

Strelow, C. ^{[2
]}

Hakkarainen, T. V. ^{[1
]}

Tukiainen, A. ^{[1
]}

Dumitrescu, M. ^{[1
]}

Mews, A. ^{[2
]}

Kipp, T. ^{[2
]}

Guina, M. ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

[2] Univ Hamburg, Inst Phys Chem, DE-20146 Hamburg, Germany

来源：

NANOTECHNOLOGY | 2012年 / 23卷 / 17期

基金：

芬兰科学院;

关键词：

GAAS;

D O I：

10.1088/0957-4484/23/17/175701

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present the growth of single, site-controlled InAs quantum dots on GaAs templates using UV-nanoimprint lithography and molecular beam epitaxy. A large quantum dot array with a period of 1.5 mu m was achieved. Single quantum dots were studied by steady-state and time-resolved micro-photoluminescence experiments. We obtained single exciton emission with a linewidth of 45 mu eV. In time-resolved experiments, we observed decay times of about 670 ps. Our results underline the potential of nanoimprint lithography and molecular beam epitaxy to create large-scale, single quantum dot arrays.

引用

页数：4

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