Improvement of the performance of a field-emission device with a metal mask
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作者:
Lei, Wei
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机构:
Southeast Univ, Sch Elect Sci & Engn, Nanjing 210096, Jiangsu, Peoples R ChinaSoutheast Univ, Sch Elect Sci & Engn, Nanjing 210096, Jiangsu, Peoples R China
Lei, Wei
[1
]
Wang, Baoping
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机构:
Southeast Univ, Sch Elect Sci & Engn, Nanjing 210096, Jiangsu, Peoples R ChinaSoutheast Univ, Sch Elect Sci & Engn, Nanjing 210096, Jiangsu, Peoples R China
Wang, Baoping
[1
]
Zhang, Xiaobing
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Southeast Univ, Sch Elect Sci & Engn, Nanjing 210096, Jiangsu, Peoples R ChinaSoutheast Univ, Sch Elect Sci & Engn, Nanjing 210096, Jiangsu, Peoples R China
Zhang, Xiaobing
[1
]
Zhao, Zhiwei
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Southeast Univ, Sch Elect Sci & Engn, Nanjing 210096, Jiangsu, Peoples R ChinaSoutheast Univ, Sch Elect Sci & Engn, Nanjing 210096, Jiangsu, Peoples R China
Zhao, Zhiwei
[1
]
Cui, Yiping
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Southeast Univ, Sch Elect Sci & Engn, Nanjing 210096, Jiangsu, Peoples R ChinaSoutheast Univ, Sch Elect Sci & Engn, Nanjing 210096, Jiangsu, Peoples R China
Cui, Yiping
[1
]
机构:
[1] Southeast Univ, Sch Elect Sci & Engn, Nanjing 210096, Jiangsu, Peoples R China
来源:
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 1
|
2012年
/
9卷
/
01期
关键词:
field emission;
carbon nanotubes;
ZnO tetrapod;
focus;
CARBON NANOTUBE;
D O I:
10.1002/pssc.201084165
中图分类号:
O469 [凝聚态物理学];
学科分类号:
070205 ;
摘要:
In a field-emission device, the background noise of the anode current is a little large due to the high anode voltage. Apart from this, the electron beam spreads because of the large gap between the cathode and the anode. To improve the performance of a field-emission device, a metal mask is introduced between the gate and the anode. Because the metal mask shields the electric field caused by the anode, the background noise of the anode current has been decreased about 90%. With a proper voltage applied on the metal mask, a convergence electric field is generated around the holes of the metal mask, so the focus performance of the electron beam is also improved. The width of the scanning line decreases from 3.1 mm to 0.9 mm after the metal mask is mounted. Because the metal mask can be fabricated in a large volume with low cost, the structure proposed in this paper has a promising application in the field-emission display devices. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
机构:
Hankyong Natl Univ, Fac Liberal Arts & Basic Sci, Ansung 456749, Kyonggido, South KoreaHankyong Natl Univ, Fac Liberal Arts & Basic Sci, Ansung 456749, Kyonggido, South Korea
机构:
SE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R ChinaSE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R China
Hou, Kai
Li, Chi
论文数: 0引用数: 0
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机构:
SE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R ChinaSE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R China
Li, Chi
Lei, Wei
论文数: 0引用数: 0
h-index: 0
机构:
SE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R ChinaSE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R China
Lei, Wei
Zhang, Xiaobing
论文数: 0引用数: 0
h-index: 0
机构:
SE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R ChinaSE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R China
Zhang, Xiaobing
Gu, Wei
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h-index: 0
机构:
SE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R ChinaSE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R China
Gu, Wei
den Engelsen, Daniel
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h-index: 0
机构:
SE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R ChinaSE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R China
机构:
NEC Corp Ltd, Silicon Syst Res Labs, Syst Devices & Fundamental Res, Kanagawa, JapanNEC Corp Ltd, Silicon Syst Res Labs, Syst Devices & Fundamental Res, Kanagawa, Japan
Ito, F
Tomihari, Y
论文数: 0引用数: 0
h-index: 0
机构:
NEC Corp Ltd, Silicon Syst Res Labs, Syst Devices & Fundamental Res, Kanagawa, JapanNEC Corp Ltd, Silicon Syst Res Labs, Syst Devices & Fundamental Res, Kanagawa, Japan
Tomihari, Y
Okada, Y
论文数: 0引用数: 0
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机构:
NEC Corp Ltd, Silicon Syst Res Labs, Syst Devices & Fundamental Res, Kanagawa, JapanNEC Corp Ltd, Silicon Syst Res Labs, Syst Devices & Fundamental Res, Kanagawa, Japan
Okada, Y
Konuma, K
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h-index: 0
机构:
NEC Corp Ltd, Silicon Syst Res Labs, Syst Devices & Fundamental Res, Kanagawa, JapanNEC Corp Ltd, Silicon Syst Res Labs, Syst Devices & Fundamental Res, Kanagawa, Japan
Konuma, K
Okamoto, A
论文数: 0引用数: 0
h-index: 0
机构:
NEC Corp Ltd, Silicon Syst Res Labs, Syst Devices & Fundamental Res, Kanagawa, JapanNEC Corp Ltd, Silicon Syst Res Labs, Syst Devices & Fundamental Res, Kanagawa, Japan
机构:
Hankyong Natl Univ, Fac Liberal Arts & Basic Sci, Ansung 456749, Kyonggido, South KoreaHankyong Natl Univ, Fac Liberal Arts & Basic Sci, Ansung 456749, Kyonggido, South Korea
机构:
SE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R ChinaSE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R China
Hou, Kai
Li, Chi
论文数: 0引用数: 0
h-index: 0
机构:
SE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R ChinaSE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R China
Li, Chi
Lei, Wei
论文数: 0引用数: 0
h-index: 0
机构:
SE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R ChinaSE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R China
Lei, Wei
Zhang, Xiaobing
论文数: 0引用数: 0
h-index: 0
机构:
SE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R ChinaSE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R China
Zhang, Xiaobing
Gu, Wei
论文数: 0引用数: 0
h-index: 0
机构:
SE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R ChinaSE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R China
Gu, Wei
den Engelsen, Daniel
论文数: 0引用数: 0
h-index: 0
机构:
SE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R ChinaSE Univ, Sch Elect Sci & Engn, Display Res Ctr, Nanjing 210096, Peoples R China
机构:
NEC Corp Ltd, Silicon Syst Res Labs, Syst Devices & Fundamental Res, Kanagawa, JapanNEC Corp Ltd, Silicon Syst Res Labs, Syst Devices & Fundamental Res, Kanagawa, Japan
Ito, F
Tomihari, Y
论文数: 0引用数: 0
h-index: 0
机构:
NEC Corp Ltd, Silicon Syst Res Labs, Syst Devices & Fundamental Res, Kanagawa, JapanNEC Corp Ltd, Silicon Syst Res Labs, Syst Devices & Fundamental Res, Kanagawa, Japan
Tomihari, Y
Okada, Y
论文数: 0引用数: 0
h-index: 0
机构:
NEC Corp Ltd, Silicon Syst Res Labs, Syst Devices & Fundamental Res, Kanagawa, JapanNEC Corp Ltd, Silicon Syst Res Labs, Syst Devices & Fundamental Res, Kanagawa, Japan
Okada, Y
Konuma, K
论文数: 0引用数: 0
h-index: 0
机构:
NEC Corp Ltd, Silicon Syst Res Labs, Syst Devices & Fundamental Res, Kanagawa, JapanNEC Corp Ltd, Silicon Syst Res Labs, Syst Devices & Fundamental Res, Kanagawa, Japan
Konuma, K
Okamoto, A
论文数: 0引用数: 0
h-index: 0
机构:
NEC Corp Ltd, Silicon Syst Res Labs, Syst Devices & Fundamental Res, Kanagawa, JapanNEC Corp Ltd, Silicon Syst Res Labs, Syst Devices & Fundamental Res, Kanagawa, Japan