CMOS humidity sensor system using carbon nitride film as sensing materials

被引：47

作者：

Lee, Sung Pil ^{[1
]}

Lee, Ji Gong ^{[2
]}

Chowdhury, Shaestagir ^{[3
]}

机构：

[1] Kyungnam Univ, Dept Elect Engn, Masan 631701, kyungnam, South Korea

[2] Case Western Reserve Univ, Cleveland, OH 44106 USA

[3] Intel Corp, Hillsboro, OR 97124 USA

来源：

SENSORS | 2008年 / 8卷 / 04期

关键词：

integrated sensors; humidity; CMOS; carbon nitride film;

D O I：

10.3390/s8042662

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

An integrated humidity sensor system with nano-structured carbon nitride film as humidity sensing material is fabricated by a 0.8 mu m analog mixed CMOS process. The integrated sensor system consists of differential humidity sensitive field effect transistors (HUSFET), temperature sensor, and operational amplifier. The process contains two poly, two metal and twin well technology. To form CNx film on Si3N4/Si substrate, plasma etching is performed to the gate area as well as trenches. CNx film is deposited by reactive RF magnetron sputtering method and patterned by the lift-off technique. The drain current is proportional to the dielectric constant, and the sensitivity is 2.8 mu A/%RH.

引用

页码：2662 / 2672

页数：11

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