Design of near-infrared single-photon detector at 1550nm wavelength

被引：0

作者：

Gao, Jiali ^{[1
]}

机构：

[1] Chongqing Univ Technol, Engn Training & Econ Management Expt Ctr, Chongqing 400054, Peoples R China

来源：

8TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGY: OPTICAL TEST, MEASUREMENT TECHNOLOGY, AND EQUIPMENT | 2016年 / 9684卷

关键词：

single photon detector; avalanche photon diode; FPGA; photon detection efficiency; dark count rate; InGaAs/InP; circuit program; 1550nm wavelength;

D O I：

10.1117/12.2244003

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Technology of near-infrared single photon detection is used in quantum communication, laser ranging and weak light detection. Present single photon detectors are usually expensive and bulky. To overcome their disadvantages, a hand-held single photon detector based on InGaAs/InP avalanche photo diode (APD) is developed. A circuit program for temperature control and bias voltage is offered. The gating signal is generated and the avalanche signal is extracted by FPGA. Experiment results show that, the single photon detector yields only 8.2x10(-6)/ns dark count rate (DCR) when photon detection efficiency is 12%, and the maximum photon detection efficiency of 16% is obtained at temperature of -55 degrees C.

引用

页数：6

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