Hybrid AMR/PHR ring sensor

被引：26
作者：
Oh, Sunjong [1 ,2 ]
Patil, P. B. [1 ,2 ]
Tran Quang Hung [1 ,2 ]
Lim, Byunghwa [1 ,2 ]
Takahashi, Migaku [1 ,2 ]
Kim, Dong Young [3 ]
Kim, CheolGi [1 ,2 ]
机构：
[1] Chungnam Natl Univ, Ctr NanoBioengn & Spintron, Taejon 305764, South Korea
[2] Chungnam Natl Univ, Dept Mat Sci & Engn, Taejon 305764, South Korea
[3] Andong Natl Univ, Dept Phys, Andong 760749, South Korea
来源：
SOLID STATE COMMUNICATIONS | 2011年 / 151卷 / 18期
基金：
新加坡国家研究基金会;
关键词：
Magnetic films and multilayers; Thin film; Electronic transport; PLANAR HALL RESISTANCE; SPIN-VALVE STRUCTURE; MAGNETIC MICROBEADS; SENSITIVITY; DEPENDENCE; BIOSENSOR; BEAD;
D O I：
10.1016/j.ssc.2011.05.049
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The AMR (anisotropic magnetoresistance) and PHR (planar Hall resistance) contribution was analyzed for fabricated ring type sensor junctions in single and multiring bridge sensors, and their field sensitivity was examined. The voltage profile, i.e. the sum of AMR and PHR effects, reveal anti-symmetric behavior with the magnetic field with small offsets due to the self-balancing of ring arm resistances, but the voltage variations for the external field are additive for all junction components. The field sensitivity of the resistance for a single ring sensor is 9.5 m Omega/Oe, and its value monotonously increased to 102.6 m Omega/Oe for 17 rings with an enhanced active area. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1248 / 1251
页数：4
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