Metal-insulator transition in V2O3 thin film caused by tip-induced strain

被引：20

作者：

Alyabyeva, N. ^{[1
,3
]}

Sakai, J. ^{[1
]}

Bavencoffe, M. ^{[1
]}

Wolfman, J. ^{[1
]}

Limelette, P. ^{[1
]}

Funakubo, H. ^{[2
]}

Ruyter, A. ^{[1
]}

机构：

[1] Univ Tours, CNRS, INSA CVL, GREMAN,UMR 7347, Parc Grandmont, F-37200 Tours, France

[2] Tokyo Inst Technol, Midori Ku, 4259 Nagatsuta Cho, Yokohama, Kanagawa 2268502, Japan

[3] Univ Paris Saclay, CNRS, ISMO, F-91405 Orsay, France

来源：

APPLIED PHYSICS LETTERS | 2018年 / 113卷 / 24期

关键词：

TEMPERATURE; MICROSCOPY;

D O I：

10.1063/1.5063712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated pressure-induced transition in a c-axis oriented vanadium sesquioxide (V2O3) thin film from a strongly correlated metal to a Mott insulator in a submicrometric region by inducing a local stress using contact atomic force microscopy. To have an access to a pressure range of sub-gigapascal, a tip with a large radius of 335nm was prepared by chemical vapour deposition of platinum onto a commercial tip with a focused ion beam (FIB). The FIB-modified tip gives a good electrical contact at low working pressures (0.25-0.4GPa) allowing unambiguously to evidence reversible metal-insulator transition in a pulsed laser-deposited V2O3 thin film by means of local investigations of current-voltage characteristics. A finite element method has confirmed that the diminution of the c/a ratio under this tip pressure explains the observed phase transition of the electron density of states in the film. Published by AIP Publishing.

引用

页数：4

共 25 条

[1] Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films [J].