Influence of net doping, excess carrier density and annealing on the boron oxygen related defect density in compensated n-type silicon

被引：42

作者：

Rougieux, F. E. ^{[1
]}

Lim, B. ^{[2
]}

Schmidt, J. ^{[2
]}

Forster, M. ^{[1
,3
,4
]}

Macdonald, D. ^{[1
]}

Cuevas, A. ^{[1
]}

机构：

[1] Australian Natl Univ, Coll Engn & Comp Sci, Res Sch Engn, Canberra, ACT 0200, Australia

[2] Inst Solar Energy Res Hamelin ISFH, D-31860 Emmerthal, Germany

[3] Apollon Solar, F-69002 Lyon, France

[4] Inst Natl Sci Appl, INL, F-69621 Villeurbanne, France

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 06期

基金：

澳大利亚研究理事会;

关键词：

DEGRADATION; DEPENDENCE; MOBILITY;

D O I：

10.1063/1.3633492

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, we present experimental data regarding the concentration of the boron-oxygen complex in compensated n-type silicon when subjected to illumination. We find that the defect density is independent of the net dopant concentration and is strongly dependent on the minority carrier concentration during illumination. We show that annealing at temperatures in the range 500 degrees C to 700 degrees C permanently reduces the defect density possibly via a decrease in the oxygen dimer concentration. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3633492]

引用

页数：5

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