Optically detected electron paramagnetic resonance of AlN single crystals

被引：30

作者：

Mason, PM

Przybylinska, H

Watkins, GD

Choyke, WJ

Slack, GA

机构：

[1] Lehigh Univ, Dept Phys, Bethlehem, PA 18015 USA

[2] Univ Pittsburgh, Dept Phys, Pittsburgh, PA 15620 USA

[3] Rensselaer Polytech Inst, Dept Phys, Troy, NY 12180 USA

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.59.1937

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

AlN single crystals have been investigated using photoluminescence (PL) and optical detection of electron paramagnetic resonance in the PL (ODEPR). All crystals were found to exhibit intense PL extending from the visible into the near infrared. Several S=1 centers, each with its own distinct emission spectrum, and distant S=1/2 pair recombination centers have been observed via ODEPR. In all except one center, D5, no hyperfine structure was observed preventing chemical identification of the impurity involved. In the case of D5 the partially resolved hyperfine structure suggests interaction with a 100% abundant nucleus of I similar to 5/2. We present arguments to associate it with a displaced host aluminum atom. [S0163-1829(99)03004-0].

引用

页码：1937 / 1947

页数：11

共 39 条

[1]

[Anonymous], 1994, ELECT PARAMAGNETIC R

[2] ELECTRON-PARAMAGNETIC-RES STUDY OF OXYGEN CENTERS IN ALN-O [J].

ARCHANGELSKII, GE ;

FOCK, MV ;

PACESOVA, SI ;

JASTRABIK, L .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1981, 108 (02) :K117-K122

[3] F-TYPE CENTERS IN NEUTRON-IRRADIATED ALN [J].

ATOBE, K ;

HONDA, M ;

FUKUOKA, N ;

OKADA, M ;

NAKAGAWA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (01) :150-152

[4] Exchange and radiative lifetimes for close Frenkel pairs on the zinc sublattice of ZnSe [J].

Barry, WA ;

Watkins, GD .

PHYSICAL REVIEW B, 1996, 54 (11) :7789-7798

[5] PHOTOLUMINESCENCE OF RESIDUAL TRANSITION-METAL IMPURITIES IN GAN [J].

BAUR, J ;

KAUFMANN, U ;

KUNZER, M ;

SCHNIEDER, J ;

AMANO, H ;

AKASAKI, I ;

DETCHPROHM, T ;

HIRAMATSU, K .

APPLIED PHYSICS LETTERS, 1995, 67 (08) :1140-1142

[6] Characterization of residual transition metal ions in GaN and AlN [J].

Baur, J ;

Kaufmann, U ;

Kunzer, M ;

Schneider, J ;

Amano, H ;

Akasaki, I ;

Detchprohm, T ;

Hiramatsu, K .

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- :55-59

[7] INFRARED LUMINESCENCE OF RESIDUAL IRON DEEP-LEVEL ACCEPTORS IN GALLIUM NITRIDE (GAN) EPITAXIAL LAYERS [J].

BAUR, J ;

MAIER, K ;

KUNZER, M ;

KAUFMANN, U ;

SCHNEIDER, J ;

AMANO, H ;

AKASAKI, I ;

DETCHPROHM, T ;

HIRAMATSU, K .

APPLIED PHYSICS LETTERS, 1994, 64 (07) :857-859

[8] DETERMINATION OF THE GAN/ALN BAND-OFFSET VIA THE (-/0)-ACCEPTOR LEVEL OF IRON [J].

BAUR, J ;

MAIER, K ;

KUNZER, M ;

KAUFMANN, U ;

SCHNEIDER, J .

APPLIED PHYSICS LETTERS, 1994, 65 (17) :2211-2213

[9] NATIVE DEFECTS IN GALLIUM NITRIDE [J].

BOGUSLAWSKI, P ;

BRIGGS, EL ;

BERNHOLC, J .

PHYSICAL REVIEW B, 1995, 51 (23) :17255-17258

[10]

BOGUSLAWSKI P, 1994, MATER RES SOC SYMP P, V339, P693, DOI 10.1557/PROC-339-693

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