On temperature coefficient of resistance of boron-doped SiGe films deposited by sputtering

被引：1
|
作者：
Jelenkovic, Emil V. [1 ]
Jevtic, Milan M. [2 ]
Tong, K. Y. [1 ]
Pang, G. K. H. [3 ]
Cheung, W. Y. [4 ]
Jha, Shrawan K. [1 ]
机构：
[1] Hong Kong Polytech Univ, Elect & Informat Engn Dept, Hong Kong, Hong Kong, Peoples R China
[2] Inst Phys, Belgrade 11080, Zemun, Serbia
[3] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China
[4] Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2007年 / 10卷 / 4-5期
关键词：
SiGe; boron; thermal coefficient of resistance; TCR; sputtering; TEM; low-frequency noise;
D O I：
10.1016/j.mssp.2007.08.001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon-germanium films, doped with boron, were deposited on oxidised silicon substrates by RF magnetron sputtering. The post-deposition dopant activation and film crystallisation was done by annealing in the temperature range from 580 to 900 degrees C. The structural changes in the silicon-germanium films caused by the presence of boron and annealing were investigated by high-resolution transmission electron microscopy. The temperature coefficient of resistance (TCR) was characterised in the temperature range from room temperature to 210 degrees C and correlated to the nano-structure of the films. The TCR values were explained by the contribution of different scattering mechanisms and confirmed by low-frequency noise measurement. Very low values of TCR can be obtained by selecting appropriate boron content and post-deposition annealing conditions. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：143 / 149
页数：7
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